Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry

S. Schöche, T. Hofmann, V. Darakchieva, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi, M. Schubert

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from 1.2 × 1017 cm- 3 to 8 × 1020 cm- 3 are compared. P-type conductivity is indicated for the Mg concentration range of 1 × 1018 cm- 3 to 9 × 1019 cm- 3 from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Schöche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two samples with Mg concentration of 2.3 × 1020 cm- 3 are identified as compensated n-type InN with very low electron concentrations which are suitable for further investigation of intrinsic material properties that are typically governed by high electron concentrations even in undoped InN. The compensated n-type InN samples can be clearly distinguished from the p-type conductive material of similar plasma frequencies by strongly reduced phonon plasmon broadening.

Original languageEnglish (US)
Pages (from-to)384-388
Number of pages5
JournalThin Solid Films
Volume571
Issue numberP3
DOIs
StatePublished - Nov 28 2014

Fingerprint

Spectroscopic ellipsometry
Charge carriers
ellipsometry
charge carriers
Infrared radiation
Conductive materials
Electrons
Carrier mobility
Buffer layers
Molecular beam epitaxy
Carrier concentration
Materials properties
Plasmas
plasma frequencies
electrons
molecular beam epitaxy
templates
buffers
conductivity

Keywords

  • Compensation
  • Free-charge carrier parameters
  • Infrared spectroscopic ellipsometry
  • Mg-doped InN
  • P-type

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry. / Schöche, S.; Hofmann, T.; Darakchieva, V.; Wang, X.; Yoshikawa, A.; Wang, K.; Araki, T.; Nanishi, Y.; Schubert, M.

In: Thin Solid Films, Vol. 571, No. P3, 28.11.2014, p. 384-388.

Research output: Contribution to journalArticle

Schöche, S, Hofmann, T, Darakchieva, V, Wang, X, Yoshikawa, A, Wang, K, Araki, T, Nanishi, Y & Schubert, M 2014, 'Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry', Thin Solid Films, vol. 571, no. P3, pp. 384-388. https://doi.org/10.1016/j.tsf.2014.01.051
Schöche, S. ; Hofmann, T. ; Darakchieva, V. ; Wang, X. ; Yoshikawa, A. ; Wang, K. ; Araki, T. ; Nanishi, Y. ; Schubert, M. / Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry. In: Thin Solid Films. 2014 ; Vol. 571, No. P3. pp. 384-388.
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AU - Wang, X.

AU - Yoshikawa, A.

AU - Wang, K.

AU - Araki, T.

AU - Nanishi, Y.

AU - Schubert, M.

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AB - Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from 1.2 × 1017 cm- 3 to 8 × 1020 cm- 3 are compared. P-type conductivity is indicated for the Mg concentration range of 1 × 1018 cm- 3 to 9 × 1019 cm- 3 from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Schöche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two samples with Mg concentration of 2.3 × 1020 cm- 3 are identified as compensated n-type InN with very low electron concentrations which are suitable for further investigation of intrinsic material properties that are typically governed by high electron concentrations even in undoped InN. The compensated n-type InN samples can be clearly distinguished from the p-type conductive material of similar plasma frequencies by strongly reduced phonon plasmon broadening.

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