Abstract
We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free-carrier and optical-phonon properties of group III-nitride heterostructures grown by metal-organic vapor phase epitaxy on sapphire. Model calculations for the ordinary (∈⊥) and extraordinary (∈∥) dielectric functions of the heterostructure components provide sensitivity to the IR-active phonon frequencies and anisotropy of the free-carrier response.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 655-658 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 216 |
| Issue number | 1 |
| DOIs | |
| State | Published - Nov 1999 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry. / Schubert, M.; Woollam, J. A.; Kasic, A.; Rheinländer, B.; Off, J.; Kuhn, B.; Scholz, F.
In: Physica Status Solidi (B) Basic Research, Vol. 216, No. 1, 11.1999, p. 655-658.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry
AU - Schubert, M.
AU - Woollam, J. A.
AU - Kasic, A.
AU - Rheinländer, B.
AU - Off, J.
AU - Kuhn, B.
AU - Scholz, F.
PY - 1999/11
Y1 - 1999/11
N2 - We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free-carrier and optical-phonon properties of group III-nitride heterostructures grown by metal-organic vapor phase epitaxy on sapphire. Model calculations for the ordinary (∈⊥) and extraordinary (∈∥) dielectric functions of the heterostructure components provide sensitivity to the IR-active phonon frequencies and anisotropy of the free-carrier response.
AB - We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free-carrier and optical-phonon properties of group III-nitride heterostructures grown by metal-organic vapor phase epitaxy on sapphire. Model calculations for the ordinary (∈⊥) and extraordinary (∈∥) dielectric functions of the heterostructure components provide sensitivity to the IR-active phonon frequencies and anisotropy of the free-carrier response.
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U2 - 10.1002/(SICI)1521-3951(199911)216:1<655::AID-PSSB655>3.0.CO;2-8
DO - 10.1002/(SICI)1521-3951(199911)216:1<655::AID-PSSB655>3.0.CO;2-8
M3 - Article
AN - SCOPUS:0033243017
VL - 216
SP - 655
EP - 658
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 1
ER -