Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry

M. Schubert, J. A. Woollam, A. Kasic, B. Rheinländer, J. Off, B. Kuhn, F. Scholz

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on the application of infrared spectroscopic ellipsometry (IR-SE) for wavelengths from 3 to 30 μm as a novel approach for nondestructive optical characterization of free-carrier and optical-phonon properties of group III-nitride heterostructures grown by metal-organic vapor phase epitaxy on sapphire. Model calculations for the ordinary (∈⊥) and extraordinary (∈∥) dielectric functions of the heterostructure components provide sensitivity to the IR-active phonon frequencies and anisotropy of the free-carrier response.

Original languageEnglish (US)
Pages (from-to)655-658
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
StatePublished - Nov 1999

Fingerprint

Ellipsometry
Nitrides
ellipsometry
nitrides
Heterojunctions
Infrared radiation
Vapor phase epitaxy
Spectroscopic ellipsometry
Aluminum Oxide
Sapphire
vapor phase epitaxy
sapphire
Anisotropy
Metals
Wavelength
anisotropy
sensitivity
wavelengths
metals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry. / Schubert, M.; Woollam, J. A.; Kasic, A.; Rheinländer, B.; Off, J.; Kuhn, B.; Scholz, F.

In: Physica Status Solidi (B) Basic Research, Vol. 216, No. 1, 11.1999, p. 655-658.

Research output: Contribution to journalArticle

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