Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry

J. Šik, M. Schubert, T. Hofmann, V. Gottschalch

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Abstract

The infrared-optical properties of GaAs/GaN xAs 1-xsuperlattice (SL) heterostructures (0 <x< 3.3%) are studied by variable angle-of-incidence infrared spectroscopic ellipsometry (IRSE) for wavenumbers from 250 cm -1 to 700 cm -1. The undoped SL structures where grown on top of a 300 nm thick undoped GaAs buffer layer on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). We observe the well-known Berreman-polariton effect within the GaAs LO-phonon region. We further observe a strong polariton-like resonance near the coupled longitudinal-optical plasmon-phonon frequency of the Te-doped substrate at 306 cm -1. For analysis of the IRSE data we employ the harmonic oscillator dielectric function model and the Drude model for free-carrier response. The additional resonance feature is explained by pseudo surface polariton (PSP) interface modes between the Te-doped GaAs and the undoped GaAs buffer layer / SL film. We find that the PSP modes are extremely sensitive to free-carrier properties within the SL structures, and we obtain a strong increase in free-carrier concentration within the GaNAs SL sublayers with increasing x from analysis of the IRSE data. We further observe the localized vibrational modes of nitrogen at 470 cm -1 in the GaN xAs 1-x SL sublayers with a polar strength that increases linearly with x, and which can be used to monitor the nitrogen concentration in GaN xAs 1-x.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
StatePublished - Dec 1 2000

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Spectroscopic ellipsometry
Phonons
Heterojunctions
Infrared radiation
Buffer layers
Nitrogen
Vapor phase epitaxy
Substrates
Carrier concentration
Optical properties
gallium arsenide
Metals

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

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title = "Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry",
abstract = "The infrared-optical properties of GaAs/GaN xAs 1-xsuperlattice (SL) heterostructures (0 -1 to 700 cm -1. The undoped SL structures where grown on top of a 300 nm thick undoped GaAs buffer layer on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). We observe the well-known Berreman-polariton effect within the GaAs LO-phonon region. We further observe a strong polariton-like resonance near the coupled longitudinal-optical plasmon-phonon frequency of the Te-doped substrate at 306 cm -1. For analysis of the IRSE data we employ the harmonic oscillator dielectric function model and the Drude model for free-carrier response. The additional resonance feature is explained by pseudo surface polariton (PSP) interface modes between the Te-doped GaAs and the undoped GaAs buffer layer / SL film. We find that the PSP modes are extremely sensitive to free-carrier properties within the SL structures, and we obtain a strong increase in free-carrier concentration within the GaNAs SL sublayers with increasing x from analysis of the IRSE data. We further observe the localized vibrational modes of nitrogen at 470 cm -1 in the GaN xAs 1-x SL sublayers with a polar strength that increases linearly with x, and which can be used to monitor the nitrogen concentration in GaN xAs 1-x.",
author = "J. Šik and M. Schubert and T. Hofmann and V. Gottschalch",
year = "2000",
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language = "English (US)",
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T1 - Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry

AU - Šik, J.

AU - Schubert, M.

AU - Hofmann, T.

AU - Gottschalch, V.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The infrared-optical properties of GaAs/GaN xAs 1-xsuperlattice (SL) heterostructures (0 -1 to 700 cm -1. The undoped SL structures where grown on top of a 300 nm thick undoped GaAs buffer layer on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). We observe the well-known Berreman-polariton effect within the GaAs LO-phonon region. We further observe a strong polariton-like resonance near the coupled longitudinal-optical plasmon-phonon frequency of the Te-doped substrate at 306 cm -1. For analysis of the IRSE data we employ the harmonic oscillator dielectric function model and the Drude model for free-carrier response. The additional resonance feature is explained by pseudo surface polariton (PSP) interface modes between the Te-doped GaAs and the undoped GaAs buffer layer / SL film. We find that the PSP modes are extremely sensitive to free-carrier properties within the SL structures, and we obtain a strong increase in free-carrier concentration within the GaNAs SL sublayers with increasing x from analysis of the IRSE data. We further observe the localized vibrational modes of nitrogen at 470 cm -1 in the GaN xAs 1-x SL sublayers with a polar strength that increases linearly with x, and which can be used to monitor the nitrogen concentration in GaN xAs 1-x.

AB - The infrared-optical properties of GaAs/GaN xAs 1-xsuperlattice (SL) heterostructures (0 -1 to 700 cm -1. The undoped SL structures where grown on top of a 300 nm thick undoped GaAs buffer layer on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). We observe the well-known Berreman-polariton effect within the GaAs LO-phonon region. We further observe a strong polariton-like resonance near the coupled longitudinal-optical plasmon-phonon frequency of the Te-doped substrate at 306 cm -1. For analysis of the IRSE data we employ the harmonic oscillator dielectric function model and the Drude model for free-carrier response. The additional resonance feature is explained by pseudo surface polariton (PSP) interface modes between the Te-doped GaAs and the undoped GaAs buffer layer / SL film. We find that the PSP modes are extremely sensitive to free-carrier properties within the SL structures, and we obtain a strong increase in free-carrier concentration within the GaNAs SL sublayers with increasing x from analysis of the IRSE data. We further observe the localized vibrational modes of nitrogen at 470 cm -1 in the GaN xAs 1-x SL sublayers with a polar strength that increases linearly with x, and which can be used to monitor the nitrogen concentration in GaN xAs 1-x.

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