Formation of low dislocation density silicon-on-insulator by a single implantation and annealing

M. K. El-Ghor, S. J. Pennycook, F. Namavar, N. H. Karam

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

High quality silicon-on-insulator structures have been formed with dislocation densities in the top silicon layer below 104 cm -2 by oxygen implantation and one-step annealing at 1300 °C for 6 h. Careful control of the implantation conditions is required in order to produce a high density of cavities in the top silicon layer. These cavities provide a stress-free sink for silicon and oxygen interstitials, reducing the point-defect supersaturations and, therefore, the nucleation and growth of oxide precipitates and dislocation loops. They also provide an internal surface which blocks free propagation of dislocation loops to the surface avoiding the formation of threading dislocations. With continued annealing, both the cavities and the oxide precipitates eventually dissolve, leaving a high quality silicon surface layer with a very low dislocation density.

Original languageEnglish (US)
Pages (from-to)156-158
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number2
DOIs
StatePublished - Dec 1 1990

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implantation
insulators
annealing
silicon
cavities
precipitates
oxides
oxygen
supersaturation
sinks
point defects
surface layers
interstitials
nucleation
propagation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of low dislocation density silicon-on-insulator by a single implantation and annealing. / El-Ghor, M. K.; Pennycook, S. J.; Namavar, F.; Karam, N. H.

In: Applied Physics Letters, Vol. 57, No. 2, 01.12.1990, p. 156-158.

Research output: Contribution to journalArticle

El-Ghor, M. K. ; Pennycook, S. J. ; Namavar, F. ; Karam, N. H. / Formation of low dislocation density silicon-on-insulator by a single implantation and annealing. In: Applied Physics Letters. 1990 ; Vol. 57, No. 2. pp. 156-158.
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