Formation of CuIn1 - XAlxSe2 thin films studied by Raman scattering

J. Olejníček, C. A. Kamler, S. A. Darveau, C. L. Exstrom, L. E. Slaymaker, A. R. Vandeventer, N. J. Ianno, R. J. Soukup

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33 Scopus citations

Abstract

CuIn1 - xAlxSe2 (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu - In - Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50-500 cm- 1 with resolution of 0.3 cm- 1. Sequential formation of InxSey, Cu2 - xSe, CuInSe2 (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn1 - xAlxSe2 products, the A1 phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm- 1 to 186 cm - 1.

Original languageEnglish (US)
Pages (from-to)5329-5334
Number of pages6
JournalThin Solid Films
Volume519
Issue number16
DOIs
Publication statusPublished - Jun 1 2011

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Keywords

  • Chalcopyrites
  • Copper Aluminium Indium Selenide
  • Raman Spectroscopy
  • Solar cells
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Olejníček, J., Kamler, C. A., Darveau, S. A., Exstrom, C. L., Slaymaker, L. E., Vandeventer, A. R., ... Soukup, R. J. (2011). Formation of CuIn1 - XAlxSe2 thin films studied by Raman scattering. Thin Solid Films, 519(16), 5329-5334. https://doi.org/10.1016/j.tsf.2011.02.030