Formation of As precipitates in GaAs by ion implantation and thermal annealing

A. Claverie, Fereydoon Namavar, Z. Liliental-Weber

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

We show that it is possible to regrow an amorphous GaAs layer created by high dose As implantation at room temperature. If implantation parameters are carefully selected, As precipitates may be formed in the regrown layer with structural characteristics the same as those observed in semi-insulating GaAs grown by molecular beam epitaxy at low temperature. Transmission electron microscopy has been used to study the structure of these precipitates in connection with the structural defects which are seen in the layer. This process appears promising for the formation of low cost semi-insulating GaAs layers.

Original languageEnglish (US)
Pages (from-to)1271-1273
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number11
DOIs
StatePublished - Dec 1 1993

Fingerprint

ion implantation
precipitates
annealing
implantation
molecular beam epitaxy
dosage
transmission electron microscopy
defects
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Formation of As precipitates in GaAs by ion implantation and thermal annealing. / Claverie, A.; Namavar, Fereydoon; Liliental-Weber, Z.

In: Applied Physics Letters, Vol. 62, No. 11, 01.12.1993, p. 1271-1273.

Research output: Contribution to journalArticle

Claverie, A, Namavar, F & Liliental-Weber, Z 1993, 'Formation of As precipitates in GaAs by ion implantation and thermal annealing', Applied Physics Letters, vol. 62, no. 11, pp. 1271-1273. https://doi.org/10.1063/1.108704
Claverie, A. ; Namavar, Fereydoon ; Liliental-Weber, Z. / Formation of As precipitates in GaAs by ion implantation and thermal annealing. In: Applied Physics Letters. 1993 ; Vol. 62, No. 11. pp. 1271-1273.
@article{2316550d583d40078430f25ffc5aef2d,
title = "Formation of As precipitates in GaAs by ion implantation and thermal annealing",
abstract = "We show that it is possible to regrow an amorphous GaAs layer created by high dose As implantation at room temperature. If implantation parameters are carefully selected, As precipitates may be formed in the regrown layer with structural characteristics the same as those observed in semi-insulating GaAs grown by molecular beam epitaxy at low temperature. Transmission electron microscopy has been used to study the structure of these precipitates in connection with the structural defects which are seen in the layer. This process appears promising for the formation of low cost semi-insulating GaAs layers.",
author = "A. Claverie and Fereydoon Namavar and Z. Liliental-Weber",
year = "1993",
month = "12",
day = "1",
doi = "10.1063/1.108704",
language = "English (US)",
volume = "62",
pages = "1271--1273",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Formation of As precipitates in GaAs by ion implantation and thermal annealing

AU - Claverie, A.

AU - Namavar, Fereydoon

AU - Liliental-Weber, Z.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - We show that it is possible to regrow an amorphous GaAs layer created by high dose As implantation at room temperature. If implantation parameters are carefully selected, As precipitates may be formed in the regrown layer with structural characteristics the same as those observed in semi-insulating GaAs grown by molecular beam epitaxy at low temperature. Transmission electron microscopy has been used to study the structure of these precipitates in connection with the structural defects which are seen in the layer. This process appears promising for the formation of low cost semi-insulating GaAs layers.

AB - We show that it is possible to regrow an amorphous GaAs layer created by high dose As implantation at room temperature. If implantation parameters are carefully selected, As precipitates may be formed in the regrown layer with structural characteristics the same as those observed in semi-insulating GaAs grown by molecular beam epitaxy at low temperature. Transmission electron microscopy has been used to study the structure of these precipitates in connection with the structural defects which are seen in the layer. This process appears promising for the formation of low cost semi-insulating GaAs layers.

UR - http://www.scopus.com/inward/record.url?scp=0001621790&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001621790&partnerID=8YFLogxK

U2 - 10.1063/1.108704

DO - 10.1063/1.108704

M3 - Article

AN - SCOPUS:0001621790

VL - 62

SP - 1271

EP - 1273

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -