Film growth on single MgO and SiO2 covered Si substrate by pulsed laser deposition

Ying Su, Jing Zhao, Li Lü, Man On Lai, Wen Dong Song, Yong Feng Lu

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

STO and subsequent YBCO thin films with different orienations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400 nm amorphous SiO2 covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO (100). TEM investigation on MgO/SiO2 interface revealed a columnar growth of MgO film with a certain thin interlayer existing between SiO2 and MgO indicating interfacial reaction between SiO2 and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an up-hill diffusion of Ba from YBCO occured during deposition and post thermal treatment processes.

Original languageEnglish (US)
Pages (from-to)248-251
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4426
DOIs
StatePublished - Jan 1 2002
EventSecond International Symposium on Laser Precision Microfabrication - Singapore, Singapore
Duration: May 16 2001May 18 2001

Fingerprint

Pulsed Laser Deposition
SiO2
Film growth
Pulsed laser deposition
pulsed laser deposition
Substrate
Single crystals
Transmission electron microscopy
transmission electron microscopy
single crystals
Transmission Electron Microscopy
Substrates
Gibbs free energy
Auger electron spectroscopy
Single Crystal
Surface chemistry
Epitaxial growth
Auger spectroscopy
electron spectroscopy
Chemical reactions

Keywords

  • Diffusion
  • Epitaxial growth
  • Interface
  • MgO
  • PLD
  • STO
  • YBCO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Film growth on single MgO and SiO2 covered Si substrate by pulsed laser deposition. / Su, Ying; Zhao, Jing; Lü, Li; Lai, Man On; Song, Wen Dong; Lu, Yong Feng.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4426, 01.01.2002, p. 248-251.

Research output: Contribution to journalConference article

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abstract = "STO and subsequent YBCO thin films with different orienations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400 nm amorphous SiO2 covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO (100). TEM investigation on MgO/SiO2 interface revealed a columnar growth of MgO film with a certain thin interlayer existing between SiO2 and MgO indicating interfacial reaction between SiO2 and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an up-hill diffusion of Ba from YBCO occured during deposition and post thermal treatment processes.",
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AU - Zhao, Jing

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N2 - STO and subsequent YBCO thin films with different orienations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400 nm amorphous SiO2 covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO (100). TEM investigation on MgO/SiO2 interface revealed a columnar growth of MgO film with a certain thin interlayer existing between SiO2 and MgO indicating interfacial reaction between SiO2 and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an up-hill diffusion of Ba from YBCO occured during deposition and post thermal treatment processes.

AB - STO and subsequent YBCO thin films with different orienations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400 nm amorphous SiO2 covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO (100). TEM investigation on MgO/SiO2 interface revealed a columnar growth of MgO film with a certain thin interlayer existing between SiO2 and MgO indicating interfacial reaction between SiO2 and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an up-hill diffusion of Ba from YBCO occured during deposition and post thermal treatment processes.

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