Ferroelectricity in Covalently functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory

Menghao Wu, Shuai Dong, Kailun Yao, Junming Liu, Xiao Cheng Zeng

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Realization of ferroelectric semiconductors by conjoining ferroelectricity with semiconductors remains a challenging task because most present-day ferroelectric materials are unsuitable for such a combination due to their wide bandgaps. Herein, we show first-principles evidence toward the realization of a new class of two-dimensional (2D) ferroelectric semiconductors through covalent functionalization of many prevailing 2D materials. Members in this new class of 2D ferroelectric semiconductors include covalently functionalized germanene, and stanene (Nat. Commun. 2014, 5, 3389), as well as MoS2 monolayer (Nat. Chem. 2015, 7, 45), covalent functionalization of the surface of bulk semiconductors such as silicon (111) (J. Phys. Chem. B 2006, 110, 23898), and the substrates of oxides such as silica with self-assembly monolayers (Nano Lett. 2014, 14, 1354). The newly predicted 2D ferroelectric semiconductors possess high mobility, modest bandgaps, and distinct ferroelectricity that can be exploited for developing various heterostructural devices with desired functionalities. For example, we propose applications of the 2D materials as 2D ferroelectric field-effect transistors with ultrahigh on/off ratio, topological transistors with Dirac Fermions switchable between holes and electrons, ferroelectric junctions with ultrahigh electro-resistance, and multiferroic junctions for controlling spin by electric fields. All these heterostructural devices take advantage of the combination of high-mobility semiconductors with fast writing and nondestructive reading capability of nonvolatile memory, thereby holding great potential for the development of future multifunctional devices.

Original languageEnglish (US)
Pages (from-to)7309-7315
Number of pages7
JournalNano Letters
Volume16
Issue number11
DOIs
StatePublished - Nov 9 2016

Fingerprint

Ferroelectricity
ferroelectricity
Ferroelectric materials
Semiconductor materials
Data storage equipment
Monolayers
Energy gap
ferroelectric materials
Fermions
Silicon
Field effect transistors
Silicon Dioxide
Self assembly
Oxides
self assembly
Transistors
transistors
field effect transistors
fermions
Silica

Keywords

  • Ferroelectric semiconductors
  • covalent functionalization
  • multifunctional devices

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Ferroelectricity in Covalently functionalized Two-dimensional Materials : Integration of High-mobility Semiconductors and Nonvolatile Memory. / Wu, Menghao; Dong, Shuai; Yao, Kailun; Liu, Junming; Zeng, Xiao Cheng.

In: Nano Letters, Vol. 16, No. 11, 09.11.2016, p. 7309-7315.

Research output: Contribution to journalArticle

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