Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications

Hossein Rabiee Golgir, Da Wei Li, Kamran Keramatnejad, Qi Ming Zou, Jun Xiao, Fei Wang, Lan Jiang, Jean François Silvain, Yongfeng Lu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this study, we successfully developed a carbon dioxide (CO2)-laser-assisted metal-organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al2O3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(1012) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W-1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.

Original languageEnglish (US)
Pages (from-to)21539-21547
Number of pages9
JournalACS Applied Materials and Interfaces
Volume9
Issue number25
DOIs
StatePublished - Jun 28 2017

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Organic Chemicals
Gallium nitride
Epilayers
Organic chemicals
Photodetectors
Chemical vapor deposition
Metals
Lasers
gallium nitride
Carbon dioxide lasers
Ultraviolet detectors
X rays
Aluminum Oxide
Substrates
Full width at half maximum
Epitaxial growth
Sapphire
Optoelectronic devices
Raman spectroscopy
Atomic force microscopy

Keywords

  • GaN epilayer
  • LMOCVD
  • fast growth
  • ultraviolet photodetector

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications. / Rabiee Golgir, Hossein; Li, Da Wei; Keramatnejad, Kamran; Zou, Qi Ming; Xiao, Jun; Wang, Fei; Jiang, Lan; Silvain, Jean François; Lu, Yongfeng.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 25, 28.06.2017, p. 21539-21547.

Research output: Contribution to journalArticle

Rabiee Golgir, Hossein ; Li, Da Wei ; Keramatnejad, Kamran ; Zou, Qi Ming ; Xiao, Jun ; Wang, Fei ; Jiang, Lan ; Silvain, Jean François ; Lu, Yongfeng. / Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 25. pp. 21539-21547.
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AU - Li, Da Wei

AU - Keramatnejad, Kamran

AU - Zou, Qi Ming

AU - Xiao, Jun

AU - Wang, Fei

AU - Jiang, Lan

AU - Silvain, Jean François

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N2 - In this study, we successfully developed a carbon dioxide (CO2)-laser-assisted metal-organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al2O3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(1012) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W-1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.

AB - In this study, we successfully developed a carbon dioxide (CO2)-laser-assisted metal-organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al2O3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(1012) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W-1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.

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