Far-infrared magnetooptic generalized ellipsometry: Determination of free-charge-carrier parameters in semiconductor thin film structures

Mathias Schubert, Tino Hofmann, Craig M. Herzinger

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

We report on the application of generalized ellipsometry at far-infrared wavelengths (150-600 cm-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures within an external magnetic field. Measurement of normalized Mueller matrix elements allows for independent determination of the free-charge-carrier parameters density, mobility and effective mass for semiconductor alloy materials in layered structures upon application of the Drude model, thereby dispensing with the need for electrical measurements. Examples reviewed here include n-type/i-type GaAs, n-type GaAs/n-type Al0.19Ga0.33In 0.48P/i-type GaAs, and n-type B0.03In 0.06Ga0.91As/i-type GaAs layer structures, measured at room-temperature and magnetic fields up to ±3 T.

Original languageEnglish (US)
Pages (from-to)563-570
Number of pages8
JournalThin Solid Films
Volume455-456
DOIs
StatePublished - May 1 2004
EventThe 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria
Duration: Jul 6 2003Jul 11 2003

Fingerprint

Magnetooptical effects
Ellipsometry
Charge carriers
ellipsometry
charge carriers
Semiconductor materials
Infrared radiation
Thin films
thin films
Magnetic fields
magnetic fields
electrical measurement
Temperature distribution
temperature distribution
Wavelength
room temperature
matrices
wavelengths
gallium arsenide

Keywords

  • Drude model
  • Free-charge-carrier
  • Generalized ellipsometry
  • Magneto-optics
  • Mueller matrix

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Far-infrared magnetooptic generalized ellipsometry : Determination of free-charge-carrier parameters in semiconductor thin film structures. / Schubert, Mathias; Hofmann, Tino; Herzinger, Craig M.

In: Thin Solid Films, Vol. 455-456, 01.05.2004, p. 563-570.

Research output: Contribution to journalConference article

@article{62a741d309c346cca7530483c13d09f6,
title = "Far-infrared magnetooptic generalized ellipsometry: Determination of free-charge-carrier parameters in semiconductor thin film structures",
abstract = "We report on the application of generalized ellipsometry at far-infrared wavelengths (150-600 cm-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures within an external magnetic field. Measurement of normalized Mueller matrix elements allows for independent determination of the free-charge-carrier parameters density, mobility and effective mass for semiconductor alloy materials in layered structures upon application of the Drude model, thereby dispensing with the need for electrical measurements. Examples reviewed here include n-type/i-type GaAs, n-type GaAs/n-type Al0.19Ga0.33In 0.48P/i-type GaAs, and n-type B0.03In 0.06Ga0.91As/i-type GaAs layer structures, measured at room-temperature and magnetic fields up to ±3 T.",
keywords = "Drude model, Free-charge-carrier, Generalized ellipsometry, Magneto-optics, Mueller matrix",
author = "Mathias Schubert and Tino Hofmann and Herzinger, {Craig M.}",
year = "2004",
month = "5",
day = "1",
doi = "10.1016/j.tsf.2003.11.215",
language = "English (US)",
volume = "455-456",
pages = "563--570",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Far-infrared magnetooptic generalized ellipsometry

T2 - Determination of free-charge-carrier parameters in semiconductor thin film structures

AU - Schubert, Mathias

AU - Hofmann, Tino

AU - Herzinger, Craig M.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - We report on the application of generalized ellipsometry at far-infrared wavelengths (150-600 cm-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures within an external magnetic field. Measurement of normalized Mueller matrix elements allows for independent determination of the free-charge-carrier parameters density, mobility and effective mass for semiconductor alloy materials in layered structures upon application of the Drude model, thereby dispensing with the need for electrical measurements. Examples reviewed here include n-type/i-type GaAs, n-type GaAs/n-type Al0.19Ga0.33In 0.48P/i-type GaAs, and n-type B0.03In 0.06Ga0.91As/i-type GaAs layer structures, measured at room-temperature and magnetic fields up to ±3 T.

AB - We report on the application of generalized ellipsometry at far-infrared wavelengths (150-600 cm-1) for measurement of the anisotropic dielectric response of doped polar semiconductors in layered structures within an external magnetic field. Measurement of normalized Mueller matrix elements allows for independent determination of the free-charge-carrier parameters density, mobility and effective mass for semiconductor alloy materials in layered structures upon application of the Drude model, thereby dispensing with the need for electrical measurements. Examples reviewed here include n-type/i-type GaAs, n-type GaAs/n-type Al0.19Ga0.33In 0.48P/i-type GaAs, and n-type B0.03In 0.06Ga0.91As/i-type GaAs layer structures, measured at room-temperature and magnetic fields up to ±3 T.

KW - Drude model

KW - Free-charge-carrier

KW - Generalized ellipsometry

KW - Magneto-optics

KW - Mueller matrix

UR - http://www.scopus.com/inward/record.url?scp=17144433284&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17144433284&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.11.215

DO - 10.1016/j.tsf.2003.11.215

M3 - Conference article

AN - SCOPUS:17144433284

VL - 455-456

SP - 563

EP - 570

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -