Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P

T. Hofmann, M. Schubert, C. M. Herzinger, I. Pietzonka

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Free-charge-carrier properties of highly disordered n-type Al0.19Ga0.33In0.48P were discussed. Far-infrared-magneto-optic ellipsometry was used. The room-temperature free-charge-carrier parameters effective mass, concentration and mobility were also studied by using magneto-optic birefringence.

Original languageEnglish (US)
Pages (from-to)3463-3465
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number20
DOIs
StatePublished - May 19 2003

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magneto-optics
ellipsometry
charge carriers
birefringence
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P. / Hofmann, T.; Schubert, M.; Herzinger, C. M.; Pietzonka, I.

In: Applied Physics Letters, Vol. 82, No. 20, 19.05.2003, p. 3463-3465.

Research output: Contribution to journalArticle

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