Far-infrared dielectric function and phonon modes of spontaneously ordered (AlxGa1-x)0.52In0.48P

Tino Hofmann, Mathias Schubert, Volker Gottschalch

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

We present a far-infrared (fir) spectroscopic ellipsometry study of the phonon properties of partially CuPtB-ordered (AlxGa 1-x)0.52In0.48P with x=0, 0.32, 0.7 and 1.0, and degrees of ordering η from 0 to 0.63, as obtained by generalized ellipsometry measurement of the near-band-gap order birefringence. An anharmonic oscillator approach is used to model the ordinary and extraordinary dielectric functions and determine the infrared-active longitudinal and transverse phonon modes of the thin-film samples. Besides the isotropic GaP-, InP- and AlP-like phonon modes, we observe alloy-induced modes with low polarity. The phonon modes of highly ordered (AlxGa1-x)0.52In 0.48P with η~0.6 are compared to phonon modes observed in the highly disordered quaternary solid solution. We propose measurement of the fir dielectric anisotropy as a sensitive indicator for existence of sublattice ordering in multicomponent group-III-group-V semiconductor alloys.

Original languageEnglish (US)
Pages (from-to)601-604
Number of pages4
JournalThin Solid Films
Volume455-456
DOIs
StatePublished - May 1 2004
EventThe 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria
Duration: Jul 6 2003Jul 11 2003

Fingerprint

Infrared radiation
Spectroscopic ellipsometry
Ellipsometry
ellipsometry
Birefringence
Solid solutions
Energy gap
Anisotropy
Semiconductor materials
Thin films
sublattices
birefringence
polarity
solid solutions
oscillators
anisotropy
thin films

Keywords

  • AlGaInP
  • CuPt-ordering
  • Far-infrared ellipsometry
  • Phonon modes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Far-infrared dielectric function and phonon modes of spontaneously ordered (AlxGa1-x)0.52In0.48P. / Hofmann, Tino; Schubert, Mathias; Gottschalch, Volker.

In: Thin Solid Films, Vol. 455-456, 01.05.2004, p. 601-604.

Research output: Contribution to journalConference article

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abstract = "We present a far-infrared (fir) spectroscopic ellipsometry study of the phonon properties of partially CuPtB-ordered (AlxGa 1-x)0.52In0.48P with x=0, 0.32, 0.7 and 1.0, and degrees of ordering η from 0 to 0.63, as obtained by generalized ellipsometry measurement of the near-band-gap order birefringence. An anharmonic oscillator approach is used to model the ordinary and extraordinary dielectric functions and determine the infrared-active longitudinal and transverse phonon modes of the thin-film samples. Besides the isotropic GaP-, InP- and AlP-like phonon modes, we observe alloy-induced modes with low polarity. The phonon modes of highly ordered (AlxGa1-x)0.52In 0.48P with η~0.6 are compared to phonon modes observed in the highly disordered quaternary solid solution. We propose measurement of the fir dielectric anisotropy as a sensitive indicator for existence of sublattice ordering in multicomponent group-III-group-V semiconductor alloys.",
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T1 - Far-infrared dielectric function and phonon modes of spontaneously ordered (AlxGa1-x)0.52In0.48P

AU - Hofmann, Tino

AU - Schubert, Mathias

AU - Gottschalch, Volker

PY - 2004/5/1

Y1 - 2004/5/1

N2 - We present a far-infrared (fir) spectroscopic ellipsometry study of the phonon properties of partially CuPtB-ordered (AlxGa 1-x)0.52In0.48P with x=0, 0.32, 0.7 and 1.0, and degrees of ordering η from 0 to 0.63, as obtained by generalized ellipsometry measurement of the near-band-gap order birefringence. An anharmonic oscillator approach is used to model the ordinary and extraordinary dielectric functions and determine the infrared-active longitudinal and transverse phonon modes of the thin-film samples. Besides the isotropic GaP-, InP- and AlP-like phonon modes, we observe alloy-induced modes with low polarity. The phonon modes of highly ordered (AlxGa1-x)0.52In 0.48P with η~0.6 are compared to phonon modes observed in the highly disordered quaternary solid solution. We propose measurement of the fir dielectric anisotropy as a sensitive indicator for existence of sublattice ordering in multicomponent group-III-group-V semiconductor alloys.

AB - We present a far-infrared (fir) spectroscopic ellipsometry study of the phonon properties of partially CuPtB-ordered (AlxGa 1-x)0.52In0.48P with x=0, 0.32, 0.7 and 1.0, and degrees of ordering η from 0 to 0.63, as obtained by generalized ellipsometry measurement of the near-band-gap order birefringence. An anharmonic oscillator approach is used to model the ordinary and extraordinary dielectric functions and determine the infrared-active longitudinal and transverse phonon modes of the thin-film samples. Besides the isotropic GaP-, InP- and AlP-like phonon modes, we observe alloy-induced modes with low polarity. The phonon modes of highly ordered (AlxGa1-x)0.52In 0.48P with η~0.6 are compared to phonon modes observed in the highly disordered quaternary solid solution. We propose measurement of the fir dielectric anisotropy as a sensitive indicator for existence of sublattice ordering in multicomponent group-III-group-V semiconductor alloys.

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KW - Far-infrared ellipsometry

KW - Phonon modes

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