Facile and Versatile Functionalization of Two-Dimensional Carbon Nitrides by Design

Magnetism/Multiferroicity, Valleytronics, and Photovoltaics

Lei Li, Menghao Wu, Xiao C Zeng

Research output: Contribution to journalArticle

Abstract

Ab initio calculation evidence has shown that two-dimensional (2D) carbon nitrides may enable “facile functionalization” when a domain of carbon nitride is wetted by a solution of metal halides with mobile cations/anions. During the wetting process, each cavity can be functionalized by a unit of metal halide. Compared with prevailing functionalization or doping strategies through either high-temperature diffusion of source ions or ion implantation by using accelerators, such a room-temperature “wet-lab” functionalization approach is more facile and efficient. The wet-lab functionalization not only can facilitate isolation of the 2D monolayer, but also, with applying different metal halides, enable various new and desirable properties for broad applications, e.g., 2D magnetism and 2D ferroelectricity with high piezoelectric coefficient. The latter can be implemented in spin-independent valleytronics for non-volatile electrical manipulations. Notably, tunable bandgaps, ranging from 1.0 to 2.5 eV, can be realized by controlling the metal-halide functionalization density, while the separation of electrons/holes can be facilitated by the ferroelectric polarizations and heterostructure band alignments. Moreover, multifunctional domains like P/N doped or magnetic/ferroelectric domains can be selectively constructed through such solution-processed functionalization with different halides, followed by seamless integration into a single sheet of carbon nitride, akin to the P/N channels in silicon wafers.

Original languageEnglish (US)
Article number1905752
JournalAdvanced Functional Materials
DOIs
StateAccepted/In press - Jan 1 2019

Fingerprint

Metal halides
metal halides
carbon nitrides
Carbon nitride
Magnetism
Ferroelectric materials
Ferroelectricity
ferroelectricity
Ion sources
Silicon wafers
Ion implantation
ion sources
wetting
Particle accelerators
halides
Anions
Wetting
Heterojunctions
ion implantation
Cations

Keywords

  • bandgap tuning
  • facile and versatile functionalization
  • magnetism/multiferroicity
  • two-dimensional carbon nitrides
  • valleytronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrochemistry

Cite this

@article{b7150cbece3d41a6995aa58f834be537,
title = "Facile and Versatile Functionalization of Two-Dimensional Carbon Nitrides by Design: Magnetism/Multiferroicity, Valleytronics, and Photovoltaics",
abstract = "Ab initio calculation evidence has shown that two-dimensional (2D) carbon nitrides may enable “facile functionalization” when a domain of carbon nitride is wetted by a solution of metal halides with mobile cations/anions. During the wetting process, each cavity can be functionalized by a unit of metal halide. Compared with prevailing functionalization or doping strategies through either high-temperature diffusion of source ions or ion implantation by using accelerators, such a room-temperature “wet-lab” functionalization approach is more facile and efficient. The wet-lab functionalization not only can facilitate isolation of the 2D monolayer, but also, with applying different metal halides, enable various new and desirable properties for broad applications, e.g., 2D magnetism and 2D ferroelectricity with high piezoelectric coefficient. The latter can be implemented in spin-independent valleytronics for non-volatile electrical manipulations. Notably, tunable bandgaps, ranging from 1.0 to 2.5 eV, can be realized by controlling the metal-halide functionalization density, while the separation of electrons/holes can be facilitated by the ferroelectric polarizations and heterostructure band alignments. Moreover, multifunctional domains like P/N doped or magnetic/ferroelectric domains can be selectively constructed through such solution-processed functionalization with different halides, followed by seamless integration into a single sheet of carbon nitride, akin to the P/N channels in silicon wafers.",
keywords = "bandgap tuning, facile and versatile functionalization, magnetism/multiferroicity, two-dimensional carbon nitrides, valleytronics",
author = "Lei Li and Menghao Wu and Zeng, {Xiao C}",
year = "2019",
month = "1",
day = "1",
doi = "10.1002/adfm.201905752",
language = "English (US)",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - Facile and Versatile Functionalization of Two-Dimensional Carbon Nitrides by Design

T2 - Magnetism/Multiferroicity, Valleytronics, and Photovoltaics

AU - Li, Lei

AU - Wu, Menghao

AU - Zeng, Xiao C

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Ab initio calculation evidence has shown that two-dimensional (2D) carbon nitrides may enable “facile functionalization” when a domain of carbon nitride is wetted by a solution of metal halides with mobile cations/anions. During the wetting process, each cavity can be functionalized by a unit of metal halide. Compared with prevailing functionalization or doping strategies through either high-temperature diffusion of source ions or ion implantation by using accelerators, such a room-temperature “wet-lab” functionalization approach is more facile and efficient. The wet-lab functionalization not only can facilitate isolation of the 2D monolayer, but also, with applying different metal halides, enable various new and desirable properties for broad applications, e.g., 2D magnetism and 2D ferroelectricity with high piezoelectric coefficient. The latter can be implemented in spin-independent valleytronics for non-volatile electrical manipulations. Notably, tunable bandgaps, ranging from 1.0 to 2.5 eV, can be realized by controlling the metal-halide functionalization density, while the separation of electrons/holes can be facilitated by the ferroelectric polarizations and heterostructure band alignments. Moreover, multifunctional domains like P/N doped or magnetic/ferroelectric domains can be selectively constructed through such solution-processed functionalization with different halides, followed by seamless integration into a single sheet of carbon nitride, akin to the P/N channels in silicon wafers.

AB - Ab initio calculation evidence has shown that two-dimensional (2D) carbon nitrides may enable “facile functionalization” when a domain of carbon nitride is wetted by a solution of metal halides with mobile cations/anions. During the wetting process, each cavity can be functionalized by a unit of metal halide. Compared with prevailing functionalization or doping strategies through either high-temperature diffusion of source ions or ion implantation by using accelerators, such a room-temperature “wet-lab” functionalization approach is more facile and efficient. The wet-lab functionalization not only can facilitate isolation of the 2D monolayer, but also, with applying different metal halides, enable various new and desirable properties for broad applications, e.g., 2D magnetism and 2D ferroelectricity with high piezoelectric coefficient. The latter can be implemented in spin-independent valleytronics for non-volatile electrical manipulations. Notably, tunable bandgaps, ranging from 1.0 to 2.5 eV, can be realized by controlling the metal-halide functionalization density, while the separation of electrons/holes can be facilitated by the ferroelectric polarizations and heterostructure band alignments. Moreover, multifunctional domains like P/N doped or magnetic/ferroelectric domains can be selectively constructed through such solution-processed functionalization with different halides, followed by seamless integration into a single sheet of carbon nitride, akin to the P/N channels in silicon wafers.

KW - bandgap tuning

KW - facile and versatile functionalization

KW - magnetism/multiferroicity

KW - two-dimensional carbon nitrides

KW - valleytronics

UR - http://www.scopus.com/inward/record.url?scp=85071076096&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85071076096&partnerID=8YFLogxK

U2 - 10.1002/adfm.201905752

DO - 10.1002/adfm.201905752

M3 - Article

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

M1 - 1905752

ER -