Fabrication and characterization of thin, self-supporting germanium single crystals

M. W. Grant, P. F. Lyman, J. H. Hoogenraad, B. S. Carlsward, D. A. Arms, L. E. Seiberling, F. Namavar

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Abstract

Thin Ge single crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxial Ge films grown by atmospheric pressure chemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Ge film near the interface that contains misfit dislocations associated with heteroepitaxial growth and relaxation of the Ge films. The resulting Ge films are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.

Original languageEnglish (US)
Pages (from-to)2486-2488
Number of pages3
JournalJournal of Applied Physics
Volume73
Issue number5
DOIs
Publication statusPublished - Dec 1 1993

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Grant, M. W., Lyman, P. F., Hoogenraad, J. H., Carlsward, B. S., Arms, D. A., Seiberling, L. E., & Namavar, F. (1993). Fabrication and characterization of thin, self-supporting germanium single crystals. Journal of Applied Physics, 73(5), 2486-2488. https://doi.org/10.1063/1.353108