Fabrication and characterization of thin, self-supporting germanium single crystals

M. W. Grant, P. F. Lyman, J. H. Hoogenraad, B. S. Carlsward, D. A. Arms, L. E. Seiberling, F. Namavar

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Thin Ge single crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxial Ge films grown by atmospheric pressure chemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Ge film near the interface that contains misfit dislocations associated with heteroepitaxial growth and relaxation of the Ge films. The resulting Ge films are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.

Original languageEnglish (US)
Pages (from-to)2486-2488
Number of pages3
JournalJournal of Applied Physics
Volume73
Issue number5
DOIs
StatePublished - Dec 1 1993

Fingerprint

germanium
fabrication
single crystals
wafers
atmospheric pressure
etching
vapor deposition
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Grant, M. W., Lyman, P. F., Hoogenraad, J. H., Carlsward, B. S., Arms, D. A., Seiberling, L. E., & Namavar, F. (1993). Fabrication and characterization of thin, self-supporting germanium single crystals. Journal of Applied Physics, 73(5), 2486-2488. https://doi.org/10.1063/1.353108

Fabrication and characterization of thin, self-supporting germanium single crystals. / Grant, M. W.; Lyman, P. F.; Hoogenraad, J. H.; Carlsward, B. S.; Arms, D. A.; Seiberling, L. E.; Namavar, F.

In: Journal of Applied Physics, Vol. 73, No. 5, 01.12.1993, p. 2486-2488.

Research output: Contribution to journalArticle

Grant, MW, Lyman, PF, Hoogenraad, JH, Carlsward, BS, Arms, DA, Seiberling, LE & Namavar, F 1993, 'Fabrication and characterization of thin, self-supporting germanium single crystals', Journal of Applied Physics, vol. 73, no. 5, pp. 2486-2488. https://doi.org/10.1063/1.353108
Grant MW, Lyman PF, Hoogenraad JH, Carlsward BS, Arms DA, Seiberling LE et al. Fabrication and characterization of thin, self-supporting germanium single crystals. Journal of Applied Physics. 1993 Dec 1;73(5):2486-2488. https://doi.org/10.1063/1.353108
Grant, M. W. ; Lyman, P. F. ; Hoogenraad, J. H. ; Carlsward, B. S. ; Arms, D. A. ; Seiberling, L. E. ; Namavar, F. / Fabrication and characterization of thin, self-supporting germanium single crystals. In: Journal of Applied Physics. 1993 ; Vol. 73, No. 5. pp. 2486-2488.
@article{2add8a2ee6da485c97e2878371d6d6a6,
title = "Fabrication and characterization of thin, self-supporting germanium single crystals",
abstract = "Thin Ge single crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxial Ge films grown by atmospheric pressure chemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Ge film near the interface that contains misfit dislocations associated with heteroepitaxial growth and relaxation of the Ge films. The resulting Ge films are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.",
author = "Grant, {M. W.} and Lyman, {P. F.} and Hoogenraad, {J. H.} and Carlsward, {B. S.} and Arms, {D. A.} and Seiberling, {L. E.} and F. Namavar",
year = "1993",
month = "12",
day = "1",
doi = "10.1063/1.353108",
language = "English (US)",
volume = "73",
pages = "2486--2488",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Fabrication and characterization of thin, self-supporting germanium single crystals

AU - Grant, M. W.

AU - Lyman, P. F.

AU - Hoogenraad, J. H.

AU - Carlsward, B. S.

AU - Arms, D. A.

AU - Seiberling, L. E.

AU - Namavar, F.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - Thin Ge single crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxial Ge films grown by atmospheric pressure chemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Ge film near the interface that contains misfit dislocations associated with heteroepitaxial growth and relaxation of the Ge films. The resulting Ge films are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.

AB - Thin Ge single crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxial Ge films grown by atmospheric pressure chemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Ge film near the interface that contains misfit dislocations associated with heteroepitaxial growth and relaxation of the Ge films. The resulting Ge films are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.

UR - http://www.scopus.com/inward/record.url?scp=0040202776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0040202776&partnerID=8YFLogxK

U2 - 10.1063/1.353108

DO - 10.1063/1.353108

M3 - Article

AN - SCOPUS:0040202776

VL - 73

SP - 2486

EP - 2488

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -