Experimental investigation of cubic to hexagonal ratio for GaN layers deposited on 3C-SiC/Si

J. Camassel, P. Vicente, N. Planes, J. Allègre, J. Pankove, Fereydoon Namavar

Research output: Contribution to journalArticle

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Abstract

We report results of a comparative investigation of GaN layers deposited on 3C-SiC/Si. Checking for the cubic form, neither X-ray nor micro-Raman scattering experiments could give an unambiguous answer. We show that selective excitation of the low temperature photoluminescence (LTPL) spectrum is a much better tool. Indeed, in many cases, a clear cubic signature was resolved around 3.25 eV (bound exciton feature) which exhibited, from time-resolved spectroscopy, a reasonably short decay-time of a few hundred picoseconds. From comparison of the corresponding intensity with the pure hexagonal one, we estimated the cubic/hexagonal ratio to range from negligibly small to ≈16%.

Original languageEnglish (US)
Pages (from-to)253-257
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
StatePublished - Jan 1 1999

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Excitons
Raman scattering
Photoluminescence
Spectroscopy
X rays
Experiments
excitons
signatures
Raman spectra
photoluminescence
Temperature
decay
spectroscopy
excitation
x rays
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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Experimental investigation of cubic to hexagonal ratio for GaN layers deposited on 3C-SiC/Si. / Camassel, J.; Vicente, P.; Planes, N.; Allègre, J.; Pankove, J.; Namavar, Fereydoon.

In: Physica Status Solidi (B) Basic Research, Vol. 216, No. 1, 01.01.1999, p. 253-257.

Research output: Contribution to journalArticle

Camassel, J. ; Vicente, P. ; Planes, N. ; Allègre, J. ; Pankove, J. ; Namavar, Fereydoon. / Experimental investigation of cubic to hexagonal ratio for GaN layers deposited on 3C-SiC/Si. In: Physica Status Solidi (B) Basic Research. 1999 ; Vol. 216, No. 1. pp. 253-257.
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