Ex-situ and in-situ selenization of copper-indium and copper-boron thin films

R. J. Soukup, N. J. Ianno, Chad Kamler, Martin Diaz, Shuchi Sharma, James Huguenin-Love, Jiři Olejniček, Scott A Darveau, Chris Exstrom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuInxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu.45In.55; and a Cu3B 2 target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.

Original languageEnglish (US)
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs
StatePublished - Dec 1 2008
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period5/11/085/16/08

Fingerprint

Indium
Boron
Energy gap
Copper
Thin films
Substitution reactions
Selenium
Auger electron spectroscopy
Sputtering
Raman spectroscopy
Solar cells
Vacuum
X ray diffraction
Atoms

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Soukup, R. J., Ianno, N. J., Kamler, C., Diaz, M., Sharma, S., Huguenin-Love, J., ... Exstrom, C. (2008). Ex-situ and in-situ selenization of copper-indium and copper-boron thin films. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 [4922546] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922546

Ex-situ and in-situ selenization of copper-indium and copper-boron thin films. / Soukup, R. J.; Ianno, N. J.; Kamler, Chad; Diaz, Martin; Sharma, Shuchi; Huguenin-Love, James; Olejniček, Jiři; Darveau, Scott A; Exstrom, Chris.

33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922546 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Soukup, RJ, Ianno, NJ, Kamler, C, Diaz, M, Sharma, S, Huguenin-Love, J, Olejniček, J, Darveau, SA & Exstrom, C 2008, Ex-situ and in-situ selenization of copper-indium and copper-boron thin films. in 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008., 4922546, Conference Record of the IEEE Photovoltaic Specialists Conference, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 5/11/08. https://doi.org/10.1109/PVSC.2008.4922546
Soukup RJ, Ianno NJ, Kamler C, Diaz M, Sharma S, Huguenin-Love J et al. Ex-situ and in-situ selenization of copper-indium and copper-boron thin films. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922546. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922546
Soukup, R. J. ; Ianno, N. J. ; Kamler, Chad ; Diaz, Martin ; Sharma, Shuchi ; Huguenin-Love, James ; Olejniček, Jiři ; Darveau, Scott A ; Exstrom, Chris. / Ex-situ and in-situ selenization of copper-indium and copper-boron thin films. 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. (Conference Record of the IEEE Photovoltaic Specialists Conference).
@inproceedings{ee89934f16794884ab17f385817583dc,
title = "Ex-situ and in-situ selenization of copper-indium and copper-boron thin films",
abstract = "It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuInxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu.45In.55; and a Cu3B 2 target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.",
author = "Soukup, {R. J.} and Ianno, {N. J.} and Chad Kamler and Martin Diaz and Shuchi Sharma and James Huguenin-Love and Jiři Olejniček and Darveau, {Scott A} and Chris Exstrom",
year = "2008",
month = "12",
day = "1",
doi = "10.1109/PVSC.2008.4922546",
language = "English (US)",
isbn = "9781424416417",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
booktitle = "33rd IEEE Photovoltaic Specialists Conference, PVSC 2008",

}

TY - GEN

T1 - Ex-situ and in-situ selenization of copper-indium and copper-boron thin films

AU - Soukup, R. J.

AU - Ianno, N. J.

AU - Kamler, Chad

AU - Diaz, Martin

AU - Sharma, Shuchi

AU - Huguenin-Love, James

AU - Olejniček, Jiři

AU - Darveau, Scott A

AU - Exstrom, Chris

PY - 2008/12/1

Y1 - 2008/12/1

N2 - It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuInxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu.45In.55; and a Cu3B 2 target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.

AB - It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CuInSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of Al has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or Al to achieve a wider bandgap. In order to fabricate a thin film of CuInxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a Cu.45In.55; and a Cu3B 2 target. Films were deposited simultaneously and sequentially. After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.

UR - http://www.scopus.com/inward/record.url?scp=84879736663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879736663&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2008.4922546

DO - 10.1109/PVSC.2008.4922546

M3 - Conference contribution

SN - 9781424416417

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008

ER -