Er-implanted porous silicon

a novel material for Si-based infrared LEDs

Fereydoon Namavar, F. Lu, C. H. Perry, A. Cremins, N. M. Kalkhoran, J. T. Daly, R. A. Soref

Research output: Contribution to journalConference article

22 Citations (Scopus)

Abstract

A strong, room-temperature, 1.54 μm emission from erbium-implanted at 190 keV into red-emitting porous silicon is demonstrated. Luminescence data showed that the intensity of infrared (IR) emission from Er implanted porous Si annealed at ≤ 650 °C, was a few orders of magnitude stronger than Er implanted quartz produced under identical conditions, and was almost comparable to IR emission from In0.53Ga0.47. As material which is used for commercial light-emitting diodes.

Original languageEnglish (US)
Pages (from-to)375-380
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume358
StatePublished - Jan 1 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Nov 30 1994

Fingerprint

Porous silicon
porous silicon
Light emitting diodes
light emitting diodes
Erbium
Infrared radiation
Quartz
Luminescence
erbium
quartz
luminescence
room temperature
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Namavar, F., Lu, F., Perry, C. H., Cremins, A., Kalkhoran, N. M., Daly, J. T., & Soref, R. A. (1995). Er-implanted porous silicon: a novel material for Si-based infrared LEDs. Materials Research Society Symposium - Proceedings, 358, 375-380.

Er-implanted porous silicon : a novel material for Si-based infrared LEDs. / Namavar, Fereydoon; Lu, F.; Perry, C. H.; Cremins, A.; Kalkhoran, N. M.; Daly, J. T.; Soref, R. A.

In: Materials Research Society Symposium - Proceedings, Vol. 358, 01.01.1995, p. 375-380.

Research output: Contribution to journalConference article

Namavar, F, Lu, F, Perry, CH, Cremins, A, Kalkhoran, NM, Daly, JT & Soref, RA 1995, 'Er-implanted porous silicon: a novel material for Si-based infrared LEDs', Materials Research Society Symposium - Proceedings, vol. 358, pp. 375-380.
Namavar F, Lu F, Perry CH, Cremins A, Kalkhoran NM, Daly JT et al. Er-implanted porous silicon: a novel material for Si-based infrared LEDs. Materials Research Society Symposium - Proceedings. 1995 Jan 1;358:375-380.
Namavar, Fereydoon ; Lu, F. ; Perry, C. H. ; Cremins, A. ; Kalkhoran, N. M. ; Daly, J. T. ; Soref, R. A. / Er-implanted porous silicon : a novel material for Si-based infrared LEDs. In: Materials Research Society Symposium - Proceedings. 1995 ; Vol. 358. pp. 375-380.
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