Epitaxial Tl2Ba2Ca2Cu3O10 on (0,0,1) LaAlO3 substrates

D. J. Werder, Sy-Hwang Liou

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Transmission electron microscopy of sputter deposited films of Tl2Ba2Ca2Cu3O10 on LaAlO3 show good film epitaxy and good film crystallinity at the film-substrate interface. Two samples, deposited under different sputtering conditions, yielded different critical current densities. The microstructure of the two samples is also very different.

Original languageEnglish (US)
Pages (from-to)430-436
Number of pages7
JournalPhysica C: Superconductivity and its applications
Volume179
Issue number4-6
DOIs
StatePublished - Sep 1 1991

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Substrates
Epitaxial growth
epitaxy
Sputtering
crystallinity
critical current
sputtering
current density
Transmission electron microscopy
transmission electron microscopy
microstructure
Microstructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Epitaxial Tl2Ba2Ca2Cu3O10 on (0,0,1) LaAlO3 substrates. / Werder, D. J.; Liou, Sy-Hwang.

In: Physica C: Superconductivity and its applications, Vol. 179, No. 4-6, 01.09.1991, p. 430-436.

Research output: Contribution to journalArticle

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