Enhanced magnetic properties of bit patterned magnetic recording media by trench-filled nanostructure

Chulmin Choi, Daehoon Hong, Young Oh, Kunbae Noh, Jin Yeol Kim, Leon Chen, Sy-Hwang Liou, Sungho Jin

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The structure and properties of nanoscale magnetic island arrays for bit patterned media (BPM) have been studied. A periodic Si nano-island array was fabricated by nano-imprint-lithography (NIL), with the trench-filling and flattening achieved by resist spin coating followed by reactive ion back-etching. A Co/Pd multilayer magnetic media with a perpendicular anisotropy was then sputtered and lifted-off so that the processed nanostructure array now has the magnetic material only on the top of the pillars. This process significantly improved the magnetic characteristics of BPM. A planarization by hydrogen silsesquioxane filling reduced the tribological interference of the protruding nanoisland heights in BPM.

Original languageEnglish (US)
Pages (from-to)113-116
Number of pages4
JournalElectronic Materials Letters
Volume6
Issue number3
DOIs
StatePublished - Sep 1 2010

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Magnetic recording
Nanostructures
Magnetic properties
Magnetic multilayers
Magnetic materials
Spin coating
Lithography
Hydrogen
Etching
Anisotropy
Ions

Keywords

  • Bit patterned media
  • Filling and planarization
  • Nano imprint lithography

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Enhanced magnetic properties of bit patterned magnetic recording media by trench-filled nanostructure. / Choi, Chulmin; Hong, Daehoon; Oh, Young; Noh, Kunbae; Kim, Jin Yeol; Chen, Leon; Liou, Sy-Hwang; Jin, Sungho.

In: Electronic Materials Letters, Vol. 6, No. 3, 01.09.2010, p. 113-116.

Research output: Contribution to journalArticle

Choi, Chulmin ; Hong, Daehoon ; Oh, Young ; Noh, Kunbae ; Kim, Jin Yeol ; Chen, Leon ; Liou, Sy-Hwang ; Jin, Sungho. / Enhanced magnetic properties of bit patterned magnetic recording media by trench-filled nanostructure. In: Electronic Materials Letters. 2010 ; Vol. 6, No. 3. pp. 113-116.
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