ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE.

SAMUEL A. ALTEROVITZ, GEORGE H.BU ABBUD, John A Woollam, DAVID LIU, YEUNG CHUNG, DIETER LANGER

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A METHOD FOR OPTIMIZING THE SENSITIVITY OF ELLIPSOMETRIC MEASUREMENTS FOR THIN DIELECTRIC FILMS ON SEMICONDUCTORS IS DESCRIBED IN SIMPLE PHYSICAL TERMS. THE TECHNIQUE IS DEMONSTRATED FOR THE CASE OF SPUTTERED SILICON NITRIDE FILMS ON GALLIUM ARSENIDE IN NONDESTRUCTIVE MEASUREMENT OF FILM PROPERTIESBY ASSUMING ONE- OR TWO-LAYER MODELS.

Original languageEnglish (US)
Pages (from-to)163-177
Number of pages15
JournalAPPL PHYS COMMUN
VolumeV 1
Issue numberN 2
StatePublished - Jan 1 1981

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Gallium arsenide
Silicon nitride
Dielectric films
Semiconductor materials
Thin films

ASJC Scopus subject areas

  • Engineering(all)

Cite this

ALTEROVITZ, SAMUEL. A., ABBUD, GEORGE. H. BU., Woollam, J. A., LIU, DAVID., CHUNG, YEUNG., & LANGER, DIETER. (1981). ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE. APPL PHYS COMMUN, V 1(N 2), 163-177.

ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE. / ALTEROVITZ, SAMUEL A.; ABBUD, GEORGE H.BU; Woollam, John A; LIU, DAVID; CHUNG, YEUNG; LANGER, DIETER.

In: APPL PHYS COMMUN, Vol. V 1, No. N 2, 01.01.1981, p. 163-177.

Research output: Contribution to journalArticle

ALTEROVITZ, SAMUELA, ABBUD, GEORGEHBU, Woollam, JA, LIU, DAVID, CHUNG, YEUNG & LANGER, DIETER 1981, 'ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE.', APPL PHYS COMMUN, vol. V 1, no. N 2, pp. 163-177.
ALTEROVITZ SAMUELA, ABBUD GEORGEHBU, Woollam JA, LIU DAVID, CHUNG YEUNG, LANGER DIETER. ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE. APPL PHYS COMMUN. 1981 Jan 1;V 1(N 2):163-177.
ALTEROVITZ, SAMUEL A. ; ABBUD, GEORGE H.BU ; Woollam, John A ; LIU, DAVID ; CHUNG, YEUNG ; LANGER, DIETER. / ELLIPSOMETRIC STUDY OF SILICON NITRIDE ON GALLIUM ARSENIDE. In: APPL PHYS COMMUN. 1981 ; Vol. V 1, No. N 2. pp. 163-177.
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