Ellipsometric studies of the diffusion of automic oxygen through silicon dioxide thin films

Bhola N. De, Kazem Memarzadeh, Agus Julianto, John Woollam, Therese M. Dever

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper we describe the application of variable angle spectroscopic ellipsometry to the study of diffusion of atomic oxygen through SiO2. Data are found to be well fit to the universal growth parabola, and the diffusion coefficient is estimated to be 10−5 cm2/min.

Original languageEnglish (US)
Pages (from-to)1065-1066
Number of pages2
JournalAIAA Journal
Volume28
Issue number6
DOIs
StatePublished - Jun 1990

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Silica
Thin films
Oxygen
Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Aerospace Engineering

Cite this

Ellipsometric studies of the diffusion of automic oxygen through silicon dioxide thin films. / De, Bhola N.; Memarzadeh, Kazem; Julianto, Agus; Woollam, John; Dever, Therese M.

In: AIAA Journal, Vol. 28, No. 6, 06.1990, p. 1065-1066.

Research output: Contribution to journalArticle

De, Bhola N. ; Memarzadeh, Kazem ; Julianto, Agus ; Woollam, John ; Dever, Therese M. / Ellipsometric studies of the diffusion of automic oxygen through silicon dioxide thin films. In: AIAA Journal. 1990 ; Vol. 28, No. 6. pp. 1065-1066.
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