Ellipsometric monitoring of defects induced by electron cyclotron resonance etching of GaAs

P. G. Snyder, N. J. Ianno, B. Wigert, S. Pittal, B. Johs, J. A. Woollam

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Spectroscopic ellipsometry (SE) measurements were made during and after electron cyclotron resonance (ECR) etching of GaAs. The spectral range for ex situ measurements, 1.24-5 eV, included the E1, E11 critical points. The E1, E11 structure was red shifted by about 50 meV, and broadened, by etching with a mixture of methane, argon, and hydrogen. Exposure to a pure H2 plasma caused greater red shifting and broadening, while a pure Ar ECR plasma produced only a slight red shift. The red shift is consistent with an increase in lattice constant of the order of 1%, in the top 10-30 nm. Broadening is consistent with crystalline lattice damage.

Original languageEnglish (US)
Pages (from-to)689-694
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume378
StatePublished - Dec 1 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 20 1995

Fingerprint

Electron cyclotron resonance
electron cyclotron resonance
red shift
Etching
etching
Plasmas
Defects
Spectroscopic ellipsometry
Monitoring
Argon
Methane
defects
Crystal lattices
Lattice constants
ellipsometry
Hydrogen
critical point
methane
argon
Crystalline materials

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ellipsometric monitoring of defects induced by electron cyclotron resonance etching of GaAs. / Snyder, P. G.; Ianno, N. J.; Wigert, B.; Pittal, S.; Johs, B.; Woollam, J. A.

In: Materials Research Society Symposium - Proceedings, Vol. 378, 01.12.1995, p. 689-694.

Research output: Contribution to journalConference article

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abstract = "Spectroscopic ellipsometry (SE) measurements were made during and after electron cyclotron resonance (ECR) etching of GaAs. The spectral range for ex situ measurements, 1.24-5 eV, included the E1, E1+Δ1 critical points. The E1, E1+Δ1 structure was red shifted by about 50 meV, and broadened, by etching with a mixture of methane, argon, and hydrogen. Exposure to a pure H2 plasma caused greater red shifting and broadening, while a pure Ar ECR plasma produced only a slight red shift. The red shift is consistent with an increase in lattice constant of the order of 1{\%}, in the top 10-30 nm. Broadening is consistent with crystalline lattice damage.",
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AU - Snyder, P. G.

AU - Ianno, N. J.

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AU - Johs, B.

AU - Woollam, J. A.

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N2 - Spectroscopic ellipsometry (SE) measurements were made during and after electron cyclotron resonance (ECR) etching of GaAs. The spectral range for ex situ measurements, 1.24-5 eV, included the E1, E1+Δ1 critical points. The E1, E1+Δ1 structure was red shifted by about 50 meV, and broadened, by etching with a mixture of methane, argon, and hydrogen. Exposure to a pure H2 plasma caused greater red shifting and broadening, while a pure Ar ECR plasma produced only a slight red shift. The red shift is consistent with an increase in lattice constant of the order of 1%, in the top 10-30 nm. Broadening is consistent with crystalline lattice damage.

AB - Spectroscopic ellipsometry (SE) measurements were made during and after electron cyclotron resonance (ECR) etching of GaAs. The spectral range for ex situ measurements, 1.24-5 eV, included the E1, E1+Δ1 critical points. The E1, E1+Δ1 structure was red shifted by about 50 meV, and broadened, by etching with a mixture of methane, argon, and hydrogen. Exposure to a pure H2 plasma caused greater red shifting and broadening, while a pure Ar ECR plasma produced only a slight red shift. The red shift is consistent with an increase in lattice constant of the order of 1%, in the top 10-30 nm. Broadening is consistent with crystalline lattice damage.

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