Ellipsometric measurements of molecular-beam-epitaxy-grown semiconductor multilayer thicknesses: A comparative study

John A. Woollam, Paul G. Snyder, Anthony W. McCormick, A. K. Rai, David Ingram, Peter P. Pronko

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Variable angle of incidence spectroscopic ellipsometry, cross-sectional transmission electron microscopy, and Rutherford backscattering are used to measure heterojunction layer thicknesses in the same AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits. Two additional samples were implanted with 750-keV Ga ions to fluences of 5×1015 and 1016 cm -2, respectively, and results of diagnostics measurements by the three techniques compared. The three techniques are found to complement each other in providing useful information.

Original languageEnglish (US)
Pages (from-to)4867-4871
Number of pages5
JournalJournal of Applied Physics
Volume62
Issue number12
DOIs
StatePublished - Dec 1 1987

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molecular beam epitaxy
complement
ellipsometry
aluminum gallium arsenides
heterojunctions
backscattering
fluence
incidence
transmission electron microscopy
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ellipsometric measurements of molecular-beam-epitaxy-grown semiconductor multilayer thicknesses : A comparative study. / Woollam, John A.; Snyder, Paul G.; McCormick, Anthony W.; Rai, A. K.; Ingram, David; Pronko, Peter P.

In: Journal of Applied Physics, Vol. 62, No. 12, 01.12.1987, p. 4867-4871.

Research output: Contribution to journalArticle

Woollam, John A. ; Snyder, Paul G. ; McCormick, Anthony W. ; Rai, A. K. ; Ingram, David ; Pronko, Peter P. / Ellipsometric measurements of molecular-beam-epitaxy-grown semiconductor multilayer thicknesses : A comparative study. In: Journal of Applied Physics. 1987 ; Vol. 62, No. 12. pp. 4867-4871.
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