Ellipsometric characterization of thin porous GaAs layers formed in HF solutions

S. Zangooie, John A Woollam

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Based on the ellipsometry method proposed, the optical anisotropy of the porous material was investigated. The anisotropy was assumed to be uniaxial with the optic axis normal to the sample surface. Results show that the anisotropy in the EMA2 was found to be small and the difference in porosity between ordinary and extraordinary directions was less than 3%. Thus, neglecting anisotropy does not significantly affect the outcome of the results and discussions presented.

Original languageEnglish (US)
Pages (from-to)2171-2173
Number of pages3
JournalJournal of Materials Science Letters
Volume19
Issue number24
DOIs
StatePublished - Jan 1 2000

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Anisotropy
Optical anisotropy
Ellipsometry
Porous materials
Optics
Porosity
gallium arsenide
Direction compound

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Ellipsometric characterization of thin porous GaAs layers formed in HF solutions. / Zangooie, S.; Woollam, John A.

In: Journal of Materials Science Letters, Vol. 19, No. 24, 01.01.2000, p. 2171-2173.

Research output: Contribution to journalArticle

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