Ellipsometric characterization of multilayer transistor structures

John A. Woollam, Paul G. Snyder, Kenneth G. Merkel, Samuel A. Alterovitz

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Variable angle spectroscopic ellipsometry has been used to determine layer thicknesses, alloy compositions and lateral homogeneity in the relatively complex semiconductor multilayer structures used for modulation-doped field effect transistors. Specifically, we have simultaneously determined five GaAs/AlxGa1As layer thicknesses and the alloy compositions x in two of these layers. Good fits between experimental data, and predicted data based on parameter-dependent models were found. In a system with seven unknown ellipsometric parameters to be solved there is potential for the correlation of variables. Thus, we have made a careful study of correlation and the dependence of solved parameter values on the mean-square error value determined in the regression analysis. Lateral homogeneity of molecular beam epitaxial-grown layer thicknesses in similar structures has also been investigated.

Original languageEnglish (US)
Pages (from-to)291-294
Number of pages4
JournalMaterials Science and Engineering B
Volume5
Issue number2
DOIs
StatePublished - Jan 1990

Fingerprint

Multilayers
Transistors
transistors
Molecular beams
Spectroscopic ellipsometry
Epitaxial layers
High electron mobility transistors
Chemical analysis
Regression analysis
Mean square error
homogeneity
Semiconductor materials
molecular beams
laminates
ellipsometry
regression analysis
field effect transistors
modulation
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ellipsometric characterization of multilayer transistor structures. / Woollam, John A.; Snyder, Paul G.; Merkel, Kenneth G.; Alterovitz, Samuel A.

In: Materials Science and Engineering B, Vol. 5, No. 2, 01.1990, p. 291-294.

Research output: Contribution to journalArticle

Woollam, John A. ; Snyder, Paul G. ; Merkel, Kenneth G. ; Alterovitz, Samuel A. / Ellipsometric characterization of multilayer transistor structures. In: Materials Science and Engineering B. 1990 ; Vol. 5, No. 2. pp. 291-294.
@article{92370d28fbaf40e9b83c324ca7e2033e,
title = "Ellipsometric characterization of multilayer transistor structures",
abstract = "Variable angle spectroscopic ellipsometry has been used to determine layer thicknesses, alloy compositions and lateral homogeneity in the relatively complex semiconductor multilayer structures used for modulation-doped field effect transistors. Specifically, we have simultaneously determined five GaAs/AlxGa1As layer thicknesses and the alloy compositions x in two of these layers. Good fits between experimental data, and predicted data based on parameter-dependent models were found. In a system with seven unknown ellipsometric parameters to be solved there is potential for the correlation of variables. Thus, we have made a careful study of correlation and the dependence of solved parameter values on the mean-square error value determined in the regression analysis. Lateral homogeneity of molecular beam epitaxial-grown layer thicknesses in similar structures has also been investigated.",
author = "Woollam, {John A.} and Snyder, {Paul G.} and Merkel, {Kenneth G.} and Alterovitz, {Samuel A.}",
year = "1990",
month = "1",
doi = "10.1016/0921-5107(90)90071-I",
language = "English (US)",
volume = "5",
pages = "291--294",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "2",

}

TY - JOUR

T1 - Ellipsometric characterization of multilayer transistor structures

AU - Woollam, John A.

AU - Snyder, Paul G.

AU - Merkel, Kenneth G.

AU - Alterovitz, Samuel A.

PY - 1990/1

Y1 - 1990/1

N2 - Variable angle spectroscopic ellipsometry has been used to determine layer thicknesses, alloy compositions and lateral homogeneity in the relatively complex semiconductor multilayer structures used for modulation-doped field effect transistors. Specifically, we have simultaneously determined five GaAs/AlxGa1As layer thicknesses and the alloy compositions x in two of these layers. Good fits between experimental data, and predicted data based on parameter-dependent models were found. In a system with seven unknown ellipsometric parameters to be solved there is potential for the correlation of variables. Thus, we have made a careful study of correlation and the dependence of solved parameter values on the mean-square error value determined in the regression analysis. Lateral homogeneity of molecular beam epitaxial-grown layer thicknesses in similar structures has also been investigated.

AB - Variable angle spectroscopic ellipsometry has been used to determine layer thicknesses, alloy compositions and lateral homogeneity in the relatively complex semiconductor multilayer structures used for modulation-doped field effect transistors. Specifically, we have simultaneously determined five GaAs/AlxGa1As layer thicknesses and the alloy compositions x in two of these layers. Good fits between experimental data, and predicted data based on parameter-dependent models were found. In a system with seven unknown ellipsometric parameters to be solved there is potential for the correlation of variables. Thus, we have made a careful study of correlation and the dependence of solved parameter values on the mean-square error value determined in the regression analysis. Lateral homogeneity of molecular beam epitaxial-grown layer thicknesses in similar structures has also been investigated.

UR - http://www.scopus.com/inward/record.url?scp=0025254712&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025254712&partnerID=8YFLogxK

U2 - 10.1016/0921-5107(90)90071-I

DO - 10.1016/0921-5107(90)90071-I

M3 - Article

AN - SCOPUS:0025254712

VL - 5

SP - 291

EP - 294

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 2

ER -