Ellipsometric analysis of built-in electric fields in semiconductor heterostructures

Paul G. Snyder, Jae E. Oh, John A. Woollam, R. E. Owens

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Measurements of Franz-Keldysh (FK) effects in GaAs-AlxGa 1-xAs heterostructures by variable angle of incidence spectroscopic ellipsometry are reported. The measured FK effects are due to the built-in band bending at the surface and heterointerfaces, with no externally applied bias or modulating voltage. The polarity of the FK line shape indicates whether the field is uniform or nonuniform (inhomogeneous) in the direction along the growth axis, while the linewidth is determined by the peak field strength. This information can be used to characterize the doping concentration in the Al xGa1-xAs layer.

Original languageEnglish (US)
Pages (from-to)770-772
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number10
DOIs
StatePublished - Dec 1 1987

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electric fields
ellipsometry
line shape
field strength
polarity
incidence
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ellipsometric analysis of built-in electric fields in semiconductor heterostructures. / Snyder, Paul G.; Oh, Jae E.; Woollam, John A.; Owens, R. E.

In: Applied Physics Letters, Vol. 51, No. 10, 01.12.1987, p. 770-772.

Research output: Contribution to journalArticle

Snyder, Paul G. ; Oh, Jae E. ; Woollam, John A. ; Owens, R. E. / Ellipsometric analysis of built-in electric fields in semiconductor heterostructures. In: Applied Physics Letters. 1987 ; Vol. 51, No. 10. pp. 770-772.
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