Electronic two-terminal bistable graphitic memories

Yubao Li, Alexander Sinitskii, James M. Tour

Research output: Contribution to journalArticle

114 Scopus citations

Abstract

Transistors are the basis for electronic switching and memory devices as they exhibit extreme reliabilities with on/off ratios of 104-10 5, and billions of these three-terminal devices can be fabricated on single planar substrates. On the other hand, two-terminal devices coupled with a nonlinear current-voltage response can be considered as alternatives provided they have large and reliable on/off ratios and that they can be fabricated on a large scale using conventional or easily accessible methods. Here, we report that two-terminal devices consisting of discontinuous 5-10 nm thin films of graphitic sheets grown by chemical vapour deposition on either nanowires or atop planar silicon oxide exhibit enormous and sharp room-temperature bistable current-voltage behaviour possessing stable, rewritable, non-volatile and non-destructive read memories with on/off ratios of up to 107 and switching times of up to 1μs (tested limit). A nanoelectromechanical mechanism is proposed for the unusually pronounced switching behaviour in the devices.

Original languageEnglish (US)
Pages (from-to)966-971
Number of pages6
JournalNature Materials
Volume7
Issue number12
DOIs
StatePublished - Dec 2008

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ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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