Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)

A. L. Ivanovskii, R. F. Sabiryanov, A. N. Skazkin, V. M. Zhukovskii, G. P. Shveikin

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Abstract

The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.

Original languageEnglish (US)
Pages (from-to)28-31
Number of pages4
JournalInorganic Materials
Volume36
Issue number1
DOIs
Publication statusPublished - Jan 1 2000

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ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Inorganic Chemistry
  • Metals and Alloys
  • Materials Chemistry

Cite this

Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In). / Ivanovskii, A. L.; Sabiryanov, R. F.; Skazkin, A. N.; Zhukovskii, V. M.; Shveikin, G. P.

In: Inorganic Materials, Vol. 36, No. 1, 01.01.2000, p. 28-31.

Research output: Contribution to journalArticle