Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)

A. L. Ivanovskii, R. F. Sabiryanov, A. N. Skazkin, V. M. Zhukovskii, G. P. Shveikin

Research output: Contribution to journalArticle

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Abstract

The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.

Original languageEnglish (US)
Pages (from-to)28-31
Number of pages4
JournalInorganic Materials
Volume36
Issue number1
DOIs
StatePublished - Jan 1 2000

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Tin
Band structure
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ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Inorganic Chemistry
  • Metals and Alloys
  • Materials Chemistry

Cite this

Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In). / Ivanovskii, A. L.; Sabiryanov, R. F.; Skazkin, A. N.; Zhukovskii, V. M.; Shveikin, G. P.

In: Inorganic Materials, Vol. 36, No. 1, 01.01.2000, p. 28-31.

Research output: Contribution to journalArticle

Ivanovskii, A. L. ; Sabiryanov, R. F. ; Skazkin, A. N. ; Zhukovskii, V. M. ; Shveikin, G. P. / Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In). In: Inorganic Materials. 2000 ; Vol. 36, No. 1. pp. 28-31.
@article{b3c28209b5004f5da5435791fc02fbe5,
title = "Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)",
abstract = "The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.",
author = "Ivanovskii, {A. L.} and Sabiryanov, {R. F.} and Skazkin, {A. N.} and Zhukovskii, {V. M.} and Shveikin, {G. P.}",
year = "2000",
month = "1",
day = "1",
doi = "10.1007/BF02758375",
language = "English (US)",
volume = "36",
pages = "28--31",
journal = "Inorganic Materials",
issn = "0020-1685",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "1",

}

TY - JOUR

T1 - Electronic structure and bonding configuration of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In)

AU - Ivanovskii, A. L.

AU - Sabiryanov, R. F.

AU - Skazkin, A. N.

AU - Zhukovskii, V. M.

AU - Shveikin, G. P.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.

AB - The electronic structure of the H-phases Ti2MC and Ti2MN (M = Al, Ga, In) is calculated by the self-consistent linearized muffin-tin-orbital method in the atomic-sphere approximation and the MO LCAO method using RMH parametrization. The band structure and bonding configuration of the H-phases are compared with those of other Ti-M-C and Ti-M-N phases.

UR - http://www.scopus.com/inward/record.url?scp=0033792086&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033792086&partnerID=8YFLogxK

U2 - 10.1007/BF02758375

DO - 10.1007/BF02758375

M3 - Article

AN - SCOPUS:0033792086

VL - 36

SP - 28

EP - 31

JO - Inorganic Materials

JF - Inorganic Materials

SN - 0020-1685

IS - 1

ER -