Electronic and optical properties of carbon nitride thin films synthesized by laser ablation under ion beam bombardment

Yongfeng Lu, Z. M. Ren, W. D. Song, D. S.H. Chan

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Carbon nitride thin films were deposited by 532 nm Nd:YAG laser ablation of graphite assisted by a nitrogen ion beam bombardment on silicon substrates. Different nitrogen ion beam energies (200, 400, and 600 eV) were used while the laser parameters remained fixed. X-ray photoelectron spectroscopy (XPS) and ellipsometry measurements were carried out to analyze the electronic and optical properties. The XPS C 1s spectrum for the C-N binding is at 286.5 eV while the N 1s spectrum has a corresponding peak of C-N binding at 396.9 eV. The optical gap Eopt is on the order of magnitude of 10-1 eV and increases with the N/C ratio in the deposited film. Linear dependence of the refractive index n and the extinction coefficient k on photon energy E in the range of 1.5-3.5 eV are established.

Original languageEnglish (US)
Pages (from-to)2133-2137
Number of pages5
JournalJournal of Applied Physics
Volume84
Issue number4
DOIs
StatePublished - Aug 15 1998

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carbon nitrides
nitrogen ions
laser ablation
bombardment
ion beams
photoelectron spectroscopy
optical properties
thin films
electronics
ellipsometry
YAG lasers
extinction
x rays
graphite
refractivity
energy
photons
silicon
coefficients
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electronic and optical properties of carbon nitride thin films synthesized by laser ablation under ion beam bombardment. / Lu, Yongfeng; Ren, Z. M.; Song, W. D.; Chan, D. S.H.

In: Journal of Applied Physics, Vol. 84, No. 4, 15.08.1998, p. 2133-2137.

Research output: Contribution to journalArticle

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