Electronic and optical properties of carbon nitride thin films synthesized by laser ablation under ion beam bombardment

Y. F. Lu, Z. M. Ren, W. D. Song, D. S.H. Chan

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Abstract

Carbon nitride thin films were deposited by 532 nm Nd:YAG laser ablation of graphite assisted by a nitrogen ion beam bombardment on silicon substrates. Different nitrogen ion beam energies (200, 400, and 600 eV) were used while the laser parameters remained fixed. X-ray photoelectron spectroscopy (XPS) and ellipsometry measurements were carried out to analyze the electronic and optical properties. The XPS C 1s spectrum for the C-N binding is at 286.5 eV while the N 1s spectrum has a corresponding peak of C-N binding at 396.9 eV. The optical gap Eopt is on the order of magnitude of 10-1 eV and increases with the N/C ratio in the deposited film. Linear dependence of the refractive index n and the extinction coefficient k on photon energy E in the range of 1.5-3.5 eV are established.

Original languageEnglish (US)
Pages (from-to)2133-2137
Number of pages5
JournalJournal of Applied Physics
Volume84
Issue number4
DOIs
Publication statusPublished - Aug 15 1998

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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