Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, V. Darakchieva

Research output: Contribution to journalArticle

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Abstract

The effective electron mass parameter in Si-doped Al0.72Ga 0.28N is determined to be m = (0.336 ± 0.020) m 0 from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m = 0.232 m 0 for GaN, an average effective electron mass of m = 0.376 m 0 can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E1(TO) and one phonon mode behavior of the A 1(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

Original languageEnglish (US)
Article number212107
JournalApplied Physics Letters
Volume103
Issue number21
DOIs
StatePublished - Nov 18 2013

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electron mass
Hall effect
electrons
ellipsometry
Raman spectra
anisotropy
predictions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Schöche, S., Kühne, P., Hofmann, T., Schubert, M., Nilsson, D., Kakanakova-Georgieva, A., ... Darakchieva, V. (2013). Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect. Applied Physics Letters, 103(21), [212107]. https://doi.org/10.1063/1.4833195

Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect. / Schöche, S.; Kühne, P.; Hofmann, T.; Schubert, M.; Nilsson, D.; Kakanakova-Georgieva, A.; Janzén, E.; Darakchieva, V.

In: Applied Physics Letters, Vol. 103, No. 21, 212107, 18.11.2013.

Research output: Contribution to journalArticle

Schöche, S, Kühne, P, Hofmann, T, Schubert, M, Nilsson, D, Kakanakova-Georgieva, A, Janzén, E & Darakchieva, V 2013, 'Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect', Applied Physics Letters, vol. 103, no. 21, 212107. https://doi.org/10.1063/1.4833195
Schöche, S. ; Kühne, P. ; Hofmann, T. ; Schubert, M. ; Nilsson, D. ; Kakanakova-Georgieva, A. ; Janzén, E. ; Darakchieva, V. / Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect. In: Applied Physics Letters. 2013 ; Vol. 103, No. 21.
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AU - Schöche, S.

AU - Kühne, P.

AU - Hofmann, T.

AU - Schubert, M.

AU - Nilsson, D.

AU - Kakanakova-Georgieva, A.

AU - Janzén, E.

AU - Darakchieva, V.

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AB - The effective electron mass parameter in Si-doped Al0.72Ga 0.28N is determined to be m = (0.336 ± 0.020) m 0 from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m = 0.232 m 0 for GaN, an average effective electron mass of m = 0.376 m 0 can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E1(TO) and one phonon mode behavior of the A 1(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies.

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