Electron effective mass and phonon modes in GaAs incorporating boron and indium

T. Hofmann, Mathias Schubert, G. Leibiger, V. Gottschalch

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The strain-free boron- and indium-containing GaAs compounds are promising candidates for III-V semiconductor solar cell absorber materials with lattice match to GaAs, for which experimental data of the electronic band structure are widely unknown. For nondegenerate, silicon-doped, n -type B0.03 In0.06 Ga0.91 As with band-gap energy of 1.36 eV, determined by near-infrared ellipsometry, a strong increase of the electron effective mass of 44% in B0.03 In0.06 Ga0.91 As compared to In0.06 Ga0.94 As is obtained from far-infrared magneto-optic generalized ellipsometry studies. The authors thereby obtain the vibrational lattice mode behavior. For BAs, an experimentally obscure compound, the curvature of the -point conduction band thus extrapolates to the free electron mass.

Original languageEnglish (US)
Article number182110
JournalApplied Physics Letters
Volume90
Issue number18
DOIs
StatePublished - May 10 2007

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ellipsometry
indium
boron
absorbers (materials)
electron mass
magneto-optics
free electrons
conduction bands
electrons
solar cells
curvature
silicon
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electron effective mass and phonon modes in GaAs incorporating boron and indium. / Hofmann, T.; Schubert, Mathias; Leibiger, G.; Gottschalch, V.

In: Applied Physics Letters, Vol. 90, No. 18, 182110, 10.05.2007.

Research output: Contribution to journalArticle

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