Electrical properties of ZnO- BaTiO3 -ZnO heterostructures with asymmetric interface charge distribution

V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, N. Ashkenov, M. Grundmann, M. Schubert

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We report on capacitance-voltage, current-voltage, Sawyer-Tower, and transient current switching measurements for a ZnO- BaTiO3 -ZnO heterostructure deposited on (001) silicon by using pulsed laser deposition. The triple-layer structure reveals asymmetric capacitance- and current-voltage hysteresis and cycling-voltage dependent Sawyer-Tower polarization drift. We explain our findings by coupling of the ferroelectric (BaTiO3) and piezoelectric (ZnO) interface charges and parallel polarization orientation of the ZnO layers causing asymmetric space charge region formation under positive and negative bias. The transient current characteristics suggest use of this structure as nonvolatile memory device.

Original languageEnglish (US)
Article number082902
JournalApplied Physics Letters
Volume95
Issue number8
DOIs
StatePublished - Sep 8 2009

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charge distribution
electrical properties
electric potential
towers
capacitance
polarization
pulsed laser deposition
space charge
hysteresis
cycles
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electrical properties of ZnO- BaTiO3 -ZnO heterostructures with asymmetric interface charge distribution. / Voora, V. M.; Hofmann, T.; Brandt, M.; Lorenz, M.; Ashkenov, N.; Grundmann, M.; Schubert, M.

In: Applied Physics Letters, Vol. 95, No. 8, 082902, 08.09.2009.

Research output: Contribution to journalArticle

Voora, V. M. ; Hofmann, T. ; Brandt, M. ; Lorenz, M. ; Ashkenov, N. ; Grundmann, M. ; Schubert, M. / Electrical properties of ZnO- BaTiO3 -ZnO heterostructures with asymmetric interface charge distribution. In: Applied Physics Letters. 2009 ; Vol. 95, No. 8.
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