Electrical characterization of rapid thermal annealed radio frequency sputtered silicon oxide films

W. K. Choi, C. K. Choo, Yongfeng Lu

Research output: Contribution to journalReview article

15 Citations (Scopus)

Abstract

An investigation of the effect of rapid thermal annealing (RTA) on the electrical properties of if sputtered silicon oxide films was carried out. The films were prepared with the argon sputtering pressure varied from 2 to 10 mTorr. It was found that the insulating property of the films improved when deposited at lower sputtering pressure. The as-deposited film with the highest conductivity was selected for the RTA experiments. It was found that RTA at T>900°C or at longer times reduces the interface trapped charge (Dit) and the fixed charge (Qf) densities to 1.8×1012 eV-1 cm-2 and 1.5×1012 cm-2, respectively. We concluded that RTA at a longer period of time is more effective in improving the film quality than raising the annealing temperature. Postmetallization anneal reduces Dit further to 3.5×1011 eV-1 cm-2.

Original languageEnglish (US)
Pages (from-to)5837-5842
Number of pages6
JournalJournal of Applied Physics
Volume80
Issue number10
DOIs
StatePublished - Nov 15 1996

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silicon oxides
oxide films
radio frequencies
annealing
sputtering
electrical properties
argon
conductivity
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electrical characterization of rapid thermal annealed radio frequency sputtered silicon oxide films. / Choi, W. K.; Choo, C. K.; Lu, Yongfeng.

In: Journal of Applied Physics, Vol. 80, No. 10, 15.11.1996, p. 5837-5842.

Research output: Contribution to journalReview article

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