Effects of rapid thermal annealing on ripple growth in excimer laser-irradiated silicon-dioxide/silicon substrates

J. J. Yu, Y. F. Lu

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

Rapid thermal processing is reported to be capable of improving film properties. In this study, the effects of rapid thermal annealing (RTA) on rapid-thermal-annealed radio-frequency-sputtered silicon oxide films and hence on excimer laser-induced ripple structures at the silicon dioxide/silicon interface are investigated. It is found that the RTA of the oxide film by increasing either annealing temperature or annealing time can enhance the ripple growth, but does not change the topography of ripple structure. The ellipsometric measurements indicate that the optical constants of the film, and hence the calculated film density increase with increasing either annealing temperature or annealing time. The increase in film density is balanced by the decrease in the corresponding film thickness. Our analytical model predicts that the increase in ripple period is a result of enhanced energy absorption caused by the decrease in equivalent reflectivity of SiO 2 /Si after RTA. The calculation is identified to be consistent with the experiment.

Original languageEnglish (US)
Pages (from-to)670-674
Number of pages5
JournalApplied Surface Science
Volume154
DOIs
StatePublished - Feb 1 2000
EventThe Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3) - Strasbourg, France
Duration: Jun 1 1999Jun 4 1999

Fingerprint

Rapid thermal annealing
Excimer lasers
Silicon
ripples
Silicon Dioxide
excimer lasers
Silica
Annealing
silicon dioxide
annealing
silicon
Substrates
Oxide films
Rapid thermal processing
Optical constants
Silicon oxides
Energy absorption
oxide films
Topography
Film thickness

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Effects of rapid thermal annealing on ripple growth in excimer laser-irradiated silicon-dioxide/silicon substrates. / Yu, J. J.; Lu, Y. F.

In: Applied Surface Science, Vol. 154, 01.02.2000, p. 670-674.

Research output: Contribution to journalConference article

@article{b1d6e12d1a1d4b68b2796574ce8c30af,
title = "Effects of rapid thermal annealing on ripple growth in excimer laser-irradiated silicon-dioxide/silicon substrates",
abstract = "Rapid thermal processing is reported to be capable of improving film properties. In this study, the effects of rapid thermal annealing (RTA) on rapid-thermal-annealed radio-frequency-sputtered silicon oxide films and hence on excimer laser-induced ripple structures at the silicon dioxide/silicon interface are investigated. It is found that the RTA of the oxide film by increasing either annealing temperature or annealing time can enhance the ripple growth, but does not change the topography of ripple structure. The ellipsometric measurements indicate that the optical constants of the film, and hence the calculated film density increase with increasing either annealing temperature or annealing time. The increase in film density is balanced by the decrease in the corresponding film thickness. Our analytical model predicts that the increase in ripple period is a result of enhanced energy absorption caused by the decrease in equivalent reflectivity of SiO 2 /Si after RTA. The calculation is identified to be consistent with the experiment.",
author = "Yu, {J. J.} and Lu, {Y. F.}",
year = "2000",
month = "2",
day = "1",
doi = "10.1016/S0169-4332(99)00418-3",
language = "English (US)",
volume = "154",
pages = "670--674",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of rapid thermal annealing on ripple growth in excimer laser-irradiated silicon-dioxide/silicon substrates

AU - Yu, J. J.

AU - Lu, Y. F.

PY - 2000/2/1

Y1 - 2000/2/1

N2 - Rapid thermal processing is reported to be capable of improving film properties. In this study, the effects of rapid thermal annealing (RTA) on rapid-thermal-annealed radio-frequency-sputtered silicon oxide films and hence on excimer laser-induced ripple structures at the silicon dioxide/silicon interface are investigated. It is found that the RTA of the oxide film by increasing either annealing temperature or annealing time can enhance the ripple growth, but does not change the topography of ripple structure. The ellipsometric measurements indicate that the optical constants of the film, and hence the calculated film density increase with increasing either annealing temperature or annealing time. The increase in film density is balanced by the decrease in the corresponding film thickness. Our analytical model predicts that the increase in ripple period is a result of enhanced energy absorption caused by the decrease in equivalent reflectivity of SiO 2 /Si after RTA. The calculation is identified to be consistent with the experiment.

AB - Rapid thermal processing is reported to be capable of improving film properties. In this study, the effects of rapid thermal annealing (RTA) on rapid-thermal-annealed radio-frequency-sputtered silicon oxide films and hence on excimer laser-induced ripple structures at the silicon dioxide/silicon interface are investigated. It is found that the RTA of the oxide film by increasing either annealing temperature or annealing time can enhance the ripple growth, but does not change the topography of ripple structure. The ellipsometric measurements indicate that the optical constants of the film, and hence the calculated film density increase with increasing either annealing temperature or annealing time. The increase in film density is balanced by the decrease in the corresponding film thickness. Our analytical model predicts that the increase in ripple period is a result of enhanced energy absorption caused by the decrease in equivalent reflectivity of SiO 2 /Si after RTA. The calculation is identified to be consistent with the experiment.

UR - http://www.scopus.com/inward/record.url?scp=0033871947&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033871947&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(99)00418-3

DO - 10.1016/S0169-4332(99)00418-3

M3 - Conference article

AN - SCOPUS:0033871947

VL - 154

SP - 670

EP - 674

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -