Effects of oxygen "ashing" on indium-tin oxide thin films

B. N. De, Yong Zhao, P. G. Snyder, J. A. Woollam, T. J. Coutts, X. Li

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Abstract

Indium-tin oxide (ITO) films were prepared by d.c. sputtering of ITO in an oxygen atmosphere, and measurements of resistivity, thickness, and optical constants were made. The resistivity was found to increase at first and then decrease substantially with ashing in an oxygen plasma. The basic optical gap is relatively unaffected by ashing, but impurity band absorption increased substantially.

Original languageEnglish (US)
Pages (from-to)647-653
Number of pages7
JournalSurface and Coatings Technology
Volume39-40
Issue numberPART 2
DOIs
Publication statusPublished - Dec 15 1989

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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