Effects of oxygen "ashing" on indium-tin oxide thin films

B. N. De, Yong Zhao, P. G. Snyder, J. A. Woollam, T. J. Coutts, X. Li

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Indium-tin oxide (ITO) films were prepared by d.c. sputtering of ITO in an oxygen atmosphere, and measurements of resistivity, thickness, and optical constants were made. The resistivity was found to increase at first and then decrease substantially with ashing in an oxygen plasma. The basic optical gap is relatively unaffected by ashing, but impurity band absorption increased substantially.

Original languageEnglish (US)
Pages (from-to)647-653
Number of pages7
JournalSurface and Coatings Technology
Volume39-40
Issue numberPART 2
DOIs
StatePublished - Dec 15 1989

Fingerprint

Tin oxides
indium oxides
Indium
tin oxides
Oxide films
Oxygen
Thin films
electrical resistivity
Optical constants
oxygen plasma
oxygen
thin films
Sputtering
oxide films
Absorption spectra
sputtering
Impurities
absorption spectra
Plasmas
atmospheres

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Effects of oxygen "ashing" on indium-tin oxide thin films. / De, B. N.; Zhao, Yong; Snyder, P. G.; Woollam, J. A.; Coutts, T. J.; Li, X.

In: Surface and Coatings Technology, Vol. 39-40, No. PART 2, 15.12.1989, p. 647-653.

Research output: Contribution to journalArticle

De, B. N. ; Zhao, Yong ; Snyder, P. G. ; Woollam, J. A. ; Coutts, T. J. ; Li, X. / Effects of oxygen "ashing" on indium-tin oxide thin films. In: Surface and Coatings Technology. 1989 ; Vol. 39-40, No. PART 2. pp. 647-653.
@article{385b8c6810fe48009e00df01f72dbbf2,
title = "Effects of oxygen {"}ashing{"} on indium-tin oxide thin films",
abstract = "Indium-tin oxide (ITO) films were prepared by d.c. sputtering of ITO in an oxygen atmosphere, and measurements of resistivity, thickness, and optical constants were made. The resistivity was found to increase at first and then decrease substantially with ashing in an oxygen plasma. The basic optical gap is relatively unaffected by ashing, but impurity band absorption increased substantially.",
author = "De, {B. N.} and Yong Zhao and Snyder, {P. G.} and Woollam, {J. A.} and Coutts, {T. J.} and X. Li",
year = "1989",
month = "12",
day = "15",
doi = "10.1016/S0257-8972(89)80026-X",
language = "English (US)",
volume = "39-40",
pages = "647--653",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "PART 2",

}

TY - JOUR

T1 - Effects of oxygen "ashing" on indium-tin oxide thin films

AU - De, B. N.

AU - Zhao, Yong

AU - Snyder, P. G.

AU - Woollam, J. A.

AU - Coutts, T. J.

AU - Li, X.

PY - 1989/12/15

Y1 - 1989/12/15

N2 - Indium-tin oxide (ITO) films were prepared by d.c. sputtering of ITO in an oxygen atmosphere, and measurements of resistivity, thickness, and optical constants were made. The resistivity was found to increase at first and then decrease substantially with ashing in an oxygen plasma. The basic optical gap is relatively unaffected by ashing, but impurity band absorption increased substantially.

AB - Indium-tin oxide (ITO) films were prepared by d.c. sputtering of ITO in an oxygen atmosphere, and measurements of resistivity, thickness, and optical constants were made. The resistivity was found to increase at first and then decrease substantially with ashing in an oxygen plasma. The basic optical gap is relatively unaffected by ashing, but impurity band absorption increased substantially.

UR - http://www.scopus.com/inward/record.url?scp=0024884364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024884364&partnerID=8YFLogxK

U2 - 10.1016/S0257-8972(89)80026-X

DO - 10.1016/S0257-8972(89)80026-X

M3 - Article

AN - SCOPUS:0024884364

VL - 39-40

SP - 647

EP - 653

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - PART 2

ER -