Effect of Mg doping on the structural and free-charge carrier properties of InN films

M. Y. Xie, N. Ben Sedrine, S. Schöche, T. Hofmann, M. Schubert, L. Hung, B. Monemar, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi, V. Darakchieva

Research output: Contribution to journalArticle

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Abstract

We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 × 1018 cm-3 to 3.9 × 1021 cm-3. The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 × 1018 cm-3-≲ [Mg]-≲ 9.0 × 1019 cm-3. The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed.

Original languageEnglish (US)
Article number163504
JournalJournal of Applied Physics
Volume115
Issue number16
DOIs
StatePublished - Apr 28 2014

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charge carriers
free electrons
lattice parameters
defects
conductivity
electron mobility
point defects
ellipsometry
polarity
molecular beam epitaxy
zinc
atomic force microscopy
inversions
microstructure
high resolution
diffraction
electrons
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Xie, M. Y., Ben Sedrine, N., Schöche, S., Hofmann, T., Schubert, M., Hung, L., ... Darakchieva, V. (2014). Effect of Mg doping on the structural and free-charge carrier properties of InN films. Journal of Applied Physics, 115(16), [163504]. https://doi.org/10.1063/1.4871975

Effect of Mg doping on the structural and free-charge carrier properties of InN films. / Xie, M. Y.; Ben Sedrine, N.; Schöche, S.; Hofmann, T.; Schubert, M.; Hung, L.; Monemar, B.; Wang, X.; Yoshikawa, A.; Wang, K.; Araki, T.; Nanishi, Y.; Darakchieva, V.

In: Journal of Applied Physics, Vol. 115, No. 16, 163504, 28.04.2014.

Research output: Contribution to journalArticle

Xie, MY, Ben Sedrine, N, Schöche, S, Hofmann, T, Schubert, M, Hung, L, Monemar, B, Wang, X, Yoshikawa, A, Wang, K, Araki, T, Nanishi, Y & Darakchieva, V 2014, 'Effect of Mg doping on the structural and free-charge carrier properties of InN films', Journal of Applied Physics, vol. 115, no. 16, 163504. https://doi.org/10.1063/1.4871975
Xie, M. Y. ; Ben Sedrine, N. ; Schöche, S. ; Hofmann, T. ; Schubert, M. ; Hung, L. ; Monemar, B. ; Wang, X. ; Yoshikawa, A. ; Wang, K. ; Araki, T. ; Nanishi, Y. ; Darakchieva, V. / Effect of Mg doping on the structural and free-charge carrier properties of InN films. In: Journal of Applied Physics. 2014 ; Vol. 115, No. 16.
@article{f8a1cdbb982b49eb8801065a86939f1a,
title = "Effect of Mg doping on the structural and free-charge carrier properties of InN films",
abstract = "We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 × 1018 cm-3 to 3.9 × 1021 cm-3. The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 × 1018 cm-3-≲ [Mg]-≲ 9.0 × 1019 cm-3. The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed.",
author = "Xie, {M. Y.} and {Ben Sedrine}, N. and S. Sch{\"o}che and T. Hofmann and M. Schubert and L. Hung and B. Monemar and X. Wang and A. Yoshikawa and K. Wang and T. Araki and Y. Nanishi and V. Darakchieva",
year = "2014",
month = "4",
day = "28",
doi = "10.1063/1.4871975",
language = "English (US)",
volume = "115",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Effect of Mg doping on the structural and free-charge carrier properties of InN films

AU - Xie, M. Y.

AU - Ben Sedrine, N.

AU - Schöche, S.

AU - Hofmann, T.

AU - Schubert, M.

AU - Hung, L.

AU - Monemar, B.

AU - Wang, X.

AU - Yoshikawa, A.

AU - Wang, K.

AU - Araki, T.

AU - Nanishi, Y.

AU - Darakchieva, V.

PY - 2014/4/28

Y1 - 2014/4/28

N2 - We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 × 1018 cm-3 to 3.9 × 1021 cm-3. The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 × 1018 cm-3-≲ [Mg]-≲ 9.0 × 1019 cm-3. The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed.

AB - We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 × 1018 cm-3 to 3.9 × 1021 cm-3. The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 × 1018 cm-3-≲ [Mg]-≲ 9.0 × 1019 cm-3. The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84900013078&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84900013078&partnerID=8YFLogxK

U2 - 10.1063/1.4871975

DO - 10.1063/1.4871975

M3 - Article

AN - SCOPUS:84900013078

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 16

M1 - 163504

ER -