Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

T. Paskova, D. Hommel, P. P. Paskov, V. Darakchieva, B. Monemar, M. Bockowski, T. Suski, I. Grzegory, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert

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Abstract

The effect of high-temperature high-pressure annealing on the residual strain, bending, and point defect redistribution of freestanding hydride vapor phase epitaxial GaN films was studied. The bending was found to be determined by the difference in the in-plane lattice parameters in the two faces of the films. The results showed a tendency of equalizing the lattice parameters in the two faces with increasing annealing temperature, leading to uniform strain distribution across the film thickness. A nonmonotonic behavior of structural parameters with increasing annealing temperature was revealed and related to the change in the point defect content under the high-temperature treatment.

Original languageEnglish (US)
Article number141909
JournalApplied Physics Letters
Volume88
Issue number14
DOIs
StatePublished - Apr 3 2006

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vapor phase epitaxy
hydrides
point defects
annealing
lattice parameters
strain distribution
defects
tendencies
film thickness
vapor phases
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy. / Paskova, T.; Hommel, D.; Paskov, P. P.; Darakchieva, V.; Monemar, B.; Bockowski, M.; Suski, T.; Grzegory, I.; Tuomisto, F.; Saarinen, K.; Ashkenov, N.; Schubert, M.

In: Applied Physics Letters, Vol. 88, No. 14, 141909, 03.04.2006.

Research output: Contribution to journalArticle

Paskova, T, Hommel, D, Paskov, PP, Darakchieva, V, Monemar, B, Bockowski, M, Suski, T, Grzegory, I, Tuomisto, F, Saarinen, K, Ashkenov, N & Schubert, M 2006, 'Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy', Applied Physics Letters, vol. 88, no. 14, 141909. https://doi.org/10.1063/1.2192149
Paskova, T. ; Hommel, D. ; Paskov, P. P. ; Darakchieva, V. ; Monemar, B. ; Bockowski, M. ; Suski, T. ; Grzegory, I. ; Tuomisto, F. ; Saarinen, K. ; Ashkenov, N. ; Schubert, M. / Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy. In: Applied Physics Letters. 2006 ; Vol. 88, No. 14.
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AU - Hommel, D.

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AU - Darakchieva, V.

AU - Monemar, B.

AU - Bockowski, M.

AU - Suski, T.

AU - Grzegory, I.

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AU - Saarinen, K.

AU - Ashkenov, N.

AU - Schubert, M.

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