Doping and characterization of erbium-implanted GaN

J. F. Torvik, R. J. Feuerstein, C. H. Qiu, J. I. Pankove, Fereydoon Namavar

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

Strong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and O implanted n-type GaN. Good device performance requires that the Er-related excitation and emission processes be efficient. Single exponential PL and EL time decays with 1/e lifetimes of 2.33 ms and 1.74 ms indicates highly efficient radiative process. The Er excitation process in GaN was studied by comparing the efficiency of direct Er-absorption, electron-hole pair recombination, and hot electron (impact) excitation. The strongest Er luminescence and the lowest pump power was found using impact excitation.

Original languageEnglish (US)
Pages (from-to)579-584
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
StatePublished - Dec 1 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

Fingerprint

Erbium
Electroluminescence
erbium
Photoluminescence
Electron absorption
Doping (additives)
Hot electrons
electroluminescence
excitation
Luminescence
Pumps
photoluminescence
hot electrons
electron impact
luminescence
pumps
life (durability)
Temperature
decay
room temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Torvik, J. F., Feuerstein, R. J., Qiu, C. H., Pankove, J. I., & Namavar, F. (1997). Doping and characterization of erbium-implanted GaN. Materials Research Society Symposium - Proceedings, 482, 579-584.

Doping and characterization of erbium-implanted GaN. / Torvik, J. F.; Feuerstein, R. J.; Qiu, C. H.; Pankove, J. I.; Namavar, Fereydoon.

In: Materials Research Society Symposium - Proceedings, Vol. 482, 01.12.1997, p. 579-584.

Research output: Contribution to journalConference article

Torvik, JF, Feuerstein, RJ, Qiu, CH, Pankove, JI & Namavar, F 1997, 'Doping and characterization of erbium-implanted GaN', Materials Research Society Symposium - Proceedings, vol. 482, pp. 579-584.
Torvik JF, Feuerstein RJ, Qiu CH, Pankove JI, Namavar F. Doping and characterization of erbium-implanted GaN. Materials Research Society Symposium - Proceedings. 1997 Dec 1;482:579-584.
Torvik, J. F. ; Feuerstein, R. J. ; Qiu, C. H. ; Pankove, J. I. ; Namavar, Fereydoon. / Doping and characterization of erbium-implanted GaN. In: Materials Research Society Symposium - Proceedings. 1997 ; Vol. 482. pp. 579-584.
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