Direct graphene growth on Co 3 O 4 (111) by molecular beam epitaxy

Mi Zhou, Frank L. Pasquale, Peter A. Dowben, Alex Boosalis, Mathias Schubert, Vanya Darakchieva, Rositza Yakimova, Lingmei Kong, Jeffry A. Kelber

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Direct growth of graphene on Co 3 O 4 (111) at 1000K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp 2 carbon lineshape, at average carbon coverages from 0.4 to 3ML. Low energy electron diffraction (LEED) indicates (111) ordering of the sp 2 carbon film with a lattice constant of 2.5(0.1) characteristic of graphene. Sixfold symmetry of the graphene diffraction spots is observed at 0.4, 1 and 3ML. The LEED data also indicate an average domain size of 1800, and show an incommensurate interface with the Co 3 O 4 (111) substrate, where the latter exhibits a lattice constant of 2.8(0.1). Core level photoemission shows a characteristically asymmetric C(1s) feature, with the expected to * satellite feature, but with a binding energy for the 3ML film of 284.9(0.1)eV, indicative of substantial graphene-to-oxide charge transfer. Spectroscopic ellipsometry data demonstrate broad similarity with graphene samples physically transferred to SiO 2 or grown on SiC substrates, but with the to * absorption blue-shifted, consistent with charge transfer to the substrate. The ability to grow graphene directly on magnetically and electrically polarizable substrates opens new opportunities for industrial scale development of charge-and spin-based devices.

Original languageEnglish (US)
Article number072201
JournalJournal of Physics Condensed Matter
Volume24
Issue number7
DOIs
StatePublished - Feb 22 2012

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Graphite
Molecular beam epitaxy
Graphene
graphene
molecular beam epitaxy
Low energy electron diffraction
Substrates
Lattice constants
Charge transfer
carbon
electron diffraction
charge transfer
Carbon
Core levels
Spectroscopic ellipsometry
Carbon films
Photoemission
Binding energy
Auger spectroscopy
ellipsometry

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Zhou, M., Pasquale, F. L., Dowben, P. A., Boosalis, A., Schubert, M., Darakchieva, V., ... Kelber, J. A. (2012). Direct graphene growth on Co 3 O 4 (111) by molecular beam epitaxy Journal of Physics Condensed Matter, 24(7), [072201]. https://doi.org/10.1088/0953-8984/24/7/072201

Direct graphene growth on Co 3 O 4 (111) by molecular beam epitaxy . / Zhou, Mi; Pasquale, Frank L.; Dowben, Peter A.; Boosalis, Alex; Schubert, Mathias; Darakchieva, Vanya; Yakimova, Rositza; Kong, Lingmei; Kelber, Jeffry A.

In: Journal of Physics Condensed Matter, Vol. 24, No. 7, 072201, 22.02.2012.

Research output: Contribution to journalArticle

Zhou, M, Pasquale, FL, Dowben, PA, Boosalis, A, Schubert, M, Darakchieva, V, Yakimova, R, Kong, L & Kelber, JA 2012, ' Direct graphene growth on Co 3 O 4 (111) by molecular beam epitaxy ', Journal of Physics Condensed Matter, vol. 24, no. 7, 072201. https://doi.org/10.1088/0953-8984/24/7/072201
Zhou, Mi ; Pasquale, Frank L. ; Dowben, Peter A. ; Boosalis, Alex ; Schubert, Mathias ; Darakchieva, Vanya ; Yakimova, Rositza ; Kong, Lingmei ; Kelber, Jeffry A. / Direct graphene growth on Co 3 O 4 (111) by molecular beam epitaxy In: Journal of Physics Condensed Matter. 2012 ; Vol. 24, No. 7.
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