Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition

C. Bundesmann, O. Buiu, S. Hall, M. Schubert

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Abstract

Dielectric constants and long-wavelength optical phonon modes of amorphous hafnium aluminate films with a maximum aluminum content of 19 at. % are studied by infrared spectroscopic ellipsometry (IRSE). The hafnium aluminate films were prepared by metal organic chemical vapor deposition on silicon substrates. IRSE revealed one polar lattice mode and one impurity-type mode, which show all a systematic shift in frequency with varying Al content. The static dielectric constant decreases from 10.1 for 4.6 at. % Al to 8.1 for 19 at. % Al. The absolute values were found to be between 50% and 70% smaller than the values obtained from electrical measurements.

Original languageEnglish (US)
Article number121916
JournalApplied Physics Letters
Volume91
Issue number12
DOIs
StatePublished - Sep 28 2007

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hafnium
metalorganic chemical vapor deposition
permittivity
ellipsometry
electrical measurement
aluminum
impurities
shift
silicon
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition. / Bundesmann, C.; Buiu, O.; Hall, S.; Schubert, M.

In: Applied Physics Letters, Vol. 91, No. 12, 121916, 28.09.2007.

Research output: Contribution to journalArticle

@article{1a32a4ac9b6b435996fd3951f84a38d4,
title = "Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition",
abstract = "Dielectric constants and long-wavelength optical phonon modes of amorphous hafnium aluminate films with a maximum aluminum content of 19 at. {\%} are studied by infrared spectroscopic ellipsometry (IRSE). The hafnium aluminate films were prepared by metal organic chemical vapor deposition on silicon substrates. IRSE revealed one polar lattice mode and one impurity-type mode, which show all a systematic shift in frequency with varying Al content. The static dielectric constant decreases from 10.1 for 4.6 at. {\%} Al to 8.1 for 19 at. {\%} Al. The absolute values were found to be between 50{\%} and 70{\%} smaller than the values obtained from electrical measurements.",
author = "C. Bundesmann and O. Buiu and S. Hall and M. Schubert",
year = "2007",
month = "9",
day = "28",
doi = "10.1063/1.2787962",
language = "English (US)",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition

AU - Bundesmann, C.

AU - Buiu, O.

AU - Hall, S.

AU - Schubert, M.

PY - 2007/9/28

Y1 - 2007/9/28

N2 - Dielectric constants and long-wavelength optical phonon modes of amorphous hafnium aluminate films with a maximum aluminum content of 19 at. % are studied by infrared spectroscopic ellipsometry (IRSE). The hafnium aluminate films were prepared by metal organic chemical vapor deposition on silicon substrates. IRSE revealed one polar lattice mode and one impurity-type mode, which show all a systematic shift in frequency with varying Al content. The static dielectric constant decreases from 10.1 for 4.6 at. % Al to 8.1 for 19 at. % Al. The absolute values were found to be between 50% and 70% smaller than the values obtained from electrical measurements.

AB - Dielectric constants and long-wavelength optical phonon modes of amorphous hafnium aluminate films with a maximum aluminum content of 19 at. % are studied by infrared spectroscopic ellipsometry (IRSE). The hafnium aluminate films were prepared by metal organic chemical vapor deposition on silicon substrates. IRSE revealed one polar lattice mode and one impurity-type mode, which show all a systematic shift in frequency with varying Al content. The static dielectric constant decreases from 10.1 for 4.6 at. % Al to 8.1 for 19 at. % Al. The absolute values were found to be between 50% and 70% smaller than the values obtained from electrical measurements.

UR - http://www.scopus.com/inward/record.url?scp=34648822097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34648822097&partnerID=8YFLogxK

U2 - 10.1063/1.2787962

DO - 10.1063/1.2787962

M3 - Article

AN - SCOPUS:34648822097

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 121916

ER -