Development of infrared sensors using Carbon Nanotube (CNT) based Field Effect Transistor (FET)

Hongzhi Chen, Ning Xi, King W C Lai, Carmen Kar Man Fung, Ruiguo Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

One dimensional (1D) Schottky diodes between metals and carbon nanotubes (CNTs) can separate the photo-generated electron-hole (e-h) pairs in order to produce photocurrent in the CNT infrared (IR) sensors for detection and quantification. However, the traditional Schottky barrier theories developed for the metal and planar semiconductor contacts are different from the contacts between metal and CNT owing to the unique properties originated from CNT's nano-scale size. Therefore how to optimize the performance of the 1D Schottky photodiodes is still a mystery. The properties of the 1D Schottky diodes are determined by the energy alignment between metals and CNT. In order to improve our understating of its working principle, we not only used different metals to explore the role of metal work function, but also investigated the performances of the photodetectors by varying the Fermi levels of the CNT through electrostatic doping utilizing the gate from CNT field effect transistor (CNTFET). It was observed that a low work function metal electrode (Cu) based photodetector can render a higher on/off ratio than its high work function contender (Au) by suppressing the dark current with a higher barrier. It was also demonstrated photocurrent was maximized by selecting high built-in potential and moderate doping using the CNTFET. CNTs may become important building blocks for future nano-optoelectronic sensors.

Original languageEnglish (US)
Title of host publicationIEEE Sensors 2009 Conference - SENSORS 2009
Pages1613-1617
Number of pages5
DOIs
StatePublished - Dec 1 2009
EventIEEE Sensors 2009 Conference - SENSORS 2009 - Christchurch, New Zealand
Duration: Oct 25 2009Oct 28 2009

Publication series

NameProceedings of IEEE Sensors

Other

OtherIEEE Sensors 2009 Conference - SENSORS 2009
CountryNew Zealand
CityChristchurch
Period10/25/0910/28/09

Fingerprint

Field effect transistors
Carbon nanotubes
Infrared radiation
Sensors
Metals
Photodetectors
Photocurrents
Diodes
Doping (additives)
Carbon nanotube field effect transistors
Dark currents
Photodiodes
Fermi level
Optoelectronic devices
Electrostatics
Semiconductor materials
Electrodes
Electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chen, H., Xi, N., Lai, K. W. C., Fung, C. K. M., & Yang, R. (2009). Development of infrared sensors using Carbon Nanotube (CNT) based Field Effect Transistor (FET). In IEEE Sensors 2009 Conference - SENSORS 2009 (pp. 1613-1617). [5398499] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2009.5398499

Development of infrared sensors using Carbon Nanotube (CNT) based Field Effect Transistor (FET). / Chen, Hongzhi; Xi, Ning; Lai, King W C; Fung, Carmen Kar Man; Yang, Ruiguo.

IEEE Sensors 2009 Conference - SENSORS 2009. 2009. p. 1613-1617 5398499 (Proceedings of IEEE Sensors).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, H, Xi, N, Lai, KWC, Fung, CKM & Yang, R 2009, Development of infrared sensors using Carbon Nanotube (CNT) based Field Effect Transistor (FET). in IEEE Sensors 2009 Conference - SENSORS 2009., 5398499, Proceedings of IEEE Sensors, pp. 1613-1617, IEEE Sensors 2009 Conference - SENSORS 2009, Christchurch, New Zealand, 10/25/09. https://doi.org/10.1109/ICSENS.2009.5398499
Chen H, Xi N, Lai KWC, Fung CKM, Yang R. Development of infrared sensors using Carbon Nanotube (CNT) based Field Effect Transistor (FET). In IEEE Sensors 2009 Conference - SENSORS 2009. 2009. p. 1613-1617. 5398499. (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2009.5398499
Chen, Hongzhi ; Xi, Ning ; Lai, King W C ; Fung, Carmen Kar Man ; Yang, Ruiguo. / Development of infrared sensors using Carbon Nanotube (CNT) based Field Effect Transistor (FET). IEEE Sensors 2009 Conference - SENSORS 2009. 2009. pp. 1613-1617 (Proceedings of IEEE Sensors).
@inproceedings{0a29c49221e14ec1abd527c04d416e4c,
title = "Development of infrared sensors using Carbon Nanotube (CNT) based Field Effect Transistor (FET)",
abstract = "One dimensional (1D) Schottky diodes between metals and carbon nanotubes (CNTs) can separate the photo-generated electron-hole (e-h) pairs in order to produce photocurrent in the CNT infrared (IR) sensors for detection and quantification. However, the traditional Schottky barrier theories developed for the metal and planar semiconductor contacts are different from the contacts between metal and CNT owing to the unique properties originated from CNT's nano-scale size. Therefore how to optimize the performance of the 1D Schottky photodiodes is still a mystery. The properties of the 1D Schottky diodes are determined by the energy alignment between metals and CNT. In order to improve our understating of its working principle, we not only used different metals to explore the role of metal work function, but also investigated the performances of the photodetectors by varying the Fermi levels of the CNT through electrostatic doping utilizing the gate from CNT field effect transistor (CNTFET). It was observed that a low work function metal electrode (Cu) based photodetector can render a higher on/off ratio than its high work function contender (Au) by suppressing the dark current with a higher barrier. It was also demonstrated photocurrent was maximized by selecting high built-in potential and moderate doping using the CNTFET. CNTs may become important building blocks for future nano-optoelectronic sensors.",
author = "Hongzhi Chen and Ning Xi and Lai, {King W C} and Fung, {Carmen Kar Man} and Ruiguo Yang",
year = "2009",
month = "12",
day = "1",
doi = "10.1109/ICSENS.2009.5398499",
language = "English (US)",
isbn = "9781424445486",
series = "Proceedings of IEEE Sensors",
pages = "1613--1617",
booktitle = "IEEE Sensors 2009 Conference - SENSORS 2009",

}

TY - GEN

T1 - Development of infrared sensors using Carbon Nanotube (CNT) based Field Effect Transistor (FET)

AU - Chen, Hongzhi

AU - Xi, Ning

AU - Lai, King W C

AU - Fung, Carmen Kar Man

AU - Yang, Ruiguo

PY - 2009/12/1

Y1 - 2009/12/1

N2 - One dimensional (1D) Schottky diodes between metals and carbon nanotubes (CNTs) can separate the photo-generated electron-hole (e-h) pairs in order to produce photocurrent in the CNT infrared (IR) sensors for detection and quantification. However, the traditional Schottky barrier theories developed for the metal and planar semiconductor contacts are different from the contacts between metal and CNT owing to the unique properties originated from CNT's nano-scale size. Therefore how to optimize the performance of the 1D Schottky photodiodes is still a mystery. The properties of the 1D Schottky diodes are determined by the energy alignment between metals and CNT. In order to improve our understating of its working principle, we not only used different metals to explore the role of metal work function, but also investigated the performances of the photodetectors by varying the Fermi levels of the CNT through electrostatic doping utilizing the gate from CNT field effect transistor (CNTFET). It was observed that a low work function metal electrode (Cu) based photodetector can render a higher on/off ratio than its high work function contender (Au) by suppressing the dark current with a higher barrier. It was also demonstrated photocurrent was maximized by selecting high built-in potential and moderate doping using the CNTFET. CNTs may become important building blocks for future nano-optoelectronic sensors.

AB - One dimensional (1D) Schottky diodes between metals and carbon nanotubes (CNTs) can separate the photo-generated electron-hole (e-h) pairs in order to produce photocurrent in the CNT infrared (IR) sensors for detection and quantification. However, the traditional Schottky barrier theories developed for the metal and planar semiconductor contacts are different from the contacts between metal and CNT owing to the unique properties originated from CNT's nano-scale size. Therefore how to optimize the performance of the 1D Schottky photodiodes is still a mystery. The properties of the 1D Schottky diodes are determined by the energy alignment between metals and CNT. In order to improve our understating of its working principle, we not only used different metals to explore the role of metal work function, but also investigated the performances of the photodetectors by varying the Fermi levels of the CNT through electrostatic doping utilizing the gate from CNT field effect transistor (CNTFET). It was observed that a low work function metal electrode (Cu) based photodetector can render a higher on/off ratio than its high work function contender (Au) by suppressing the dark current with a higher barrier. It was also demonstrated photocurrent was maximized by selecting high built-in potential and moderate doping using the CNTFET. CNTs may become important building blocks for future nano-optoelectronic sensors.

UR - http://www.scopus.com/inward/record.url?scp=77951139013&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951139013&partnerID=8YFLogxK

U2 - 10.1109/ICSENS.2009.5398499

DO - 10.1109/ICSENS.2009.5398499

M3 - Conference contribution

SN - 9781424445486

T3 - Proceedings of IEEE Sensors

SP - 1613

EP - 1617

BT - IEEE Sensors 2009 Conference - SENSORS 2009

ER -