Determination of the displacement energies of O, Si and Zr under electron beam irradiation

P. D. Edmondson, W. J. Weber, F. Namavar, Y. Zhang

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The response of nanocrystalline, stabilizer-free cubic zirconia thin films on a Si substrate to electron beam irradiation with energies of 4, 110 and 200 keV and fluences up to ∼1.5 × 10 22 e m -2 has been studied to determine the displacement energies. The 110 and 200 keV irradiations were performed in situ using a transmission electron microscope; the 4 keV irradiations were performed ex situ using an electron gun. In all three irradiations, no structural modification of the zirconia was observed, despite the high fluxes and fluences. However the Si substrate on which the zirconia film was deposited was amorphized under the 200 keV electron irradiation. Examination of the electron-solid interactions reveals that the kinetic energy transfer from the 200 keV electrons to the silicon lattice is sufficient to cause atomic displacements, resulting in amorphization. The kinetic energy transfer from the 200 keV electrons to the oxygen sub-lattice of the zirconia may be sufficient to induce defect production, however, no evidence of defect production was observed. The displacement cross-section value of Zr was found to be ∼400 times greater than that of O indicating that the O atoms are effectively screened from the electrons by the Zr atoms, and, therefore, the displacement of O is inefficient.

Original languageEnglish (US)
Pages (from-to)86-91
Number of pages6
JournalJournal of Nuclear Materials
Volume422
Issue number1-3
DOIs
StatePublished - Mar 1 2012

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zirconium oxides
Zirconia
Electron beams
Irradiation
electron beams
irradiation
Electrons
Kinetic energy
Energy transfer
fluence
electrons
kinetic energy
energy transfer
Atoms
Electron guns
Defects
Electron irradiation
energy
Amorphization
electron guns

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

Cite this

Determination of the displacement energies of O, Si and Zr under electron beam irradiation. / Edmondson, P. D.; Weber, W. J.; Namavar, F.; Zhang, Y.

In: Journal of Nuclear Materials, Vol. 422, No. 1-3, 01.03.2012, p. 86-91.

Research output: Contribution to journalArticle

Edmondson, P. D. ; Weber, W. J. ; Namavar, F. ; Zhang, Y. / Determination of the displacement energies of O, Si and Zr under electron beam irradiation. In: Journal of Nuclear Materials. 2012 ; Vol. 422, No. 1-3. pp. 86-91.
@article{5b4ddf6548a14c16b7e0a8b668d86c59,
title = "Determination of the displacement energies of O, Si and Zr under electron beam irradiation",
abstract = "The response of nanocrystalline, stabilizer-free cubic zirconia thin films on a Si substrate to electron beam irradiation with energies of 4, 110 and 200 keV and fluences up to ∼1.5 × 10 22 e m -2 has been studied to determine the displacement energies. The 110 and 200 keV irradiations were performed in situ using a transmission electron microscope; the 4 keV irradiations were performed ex situ using an electron gun. In all three irradiations, no structural modification of the zirconia was observed, despite the high fluxes and fluences. However the Si substrate on which the zirconia film was deposited was amorphized under the 200 keV electron irradiation. Examination of the electron-solid interactions reveals that the kinetic energy transfer from the 200 keV electrons to the silicon lattice is sufficient to cause atomic displacements, resulting in amorphization. The kinetic energy transfer from the 200 keV electrons to the oxygen sub-lattice of the zirconia may be sufficient to induce defect production, however, no evidence of defect production was observed. The displacement cross-section value of Zr was found to be ∼400 times greater than that of O indicating that the O atoms are effectively screened from the electrons by the Zr atoms, and, therefore, the displacement of O is inefficient.",
author = "Edmondson, {P. D.} and Weber, {W. J.} and F. Namavar and Y. Zhang",
year = "2012",
month = "3",
day = "1",
doi = "10.1016/j.jnucmat.2011.12.021",
language = "English (US)",
volume = "422",
pages = "86--91",
journal = "Journal of Nuclear Materials",
issn = "0022-3115",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Determination of the displacement energies of O, Si and Zr under electron beam irradiation

AU - Edmondson, P. D.

AU - Weber, W. J.

AU - Namavar, F.

AU - Zhang, Y.

PY - 2012/3/1

Y1 - 2012/3/1

N2 - The response of nanocrystalline, stabilizer-free cubic zirconia thin films on a Si substrate to electron beam irradiation with energies of 4, 110 and 200 keV and fluences up to ∼1.5 × 10 22 e m -2 has been studied to determine the displacement energies. The 110 and 200 keV irradiations were performed in situ using a transmission electron microscope; the 4 keV irradiations were performed ex situ using an electron gun. In all three irradiations, no structural modification of the zirconia was observed, despite the high fluxes and fluences. However the Si substrate on which the zirconia film was deposited was amorphized under the 200 keV electron irradiation. Examination of the electron-solid interactions reveals that the kinetic energy transfer from the 200 keV electrons to the silicon lattice is sufficient to cause atomic displacements, resulting in amorphization. The kinetic energy transfer from the 200 keV electrons to the oxygen sub-lattice of the zirconia may be sufficient to induce defect production, however, no evidence of defect production was observed. The displacement cross-section value of Zr was found to be ∼400 times greater than that of O indicating that the O atoms are effectively screened from the electrons by the Zr atoms, and, therefore, the displacement of O is inefficient.

AB - The response of nanocrystalline, stabilizer-free cubic zirconia thin films on a Si substrate to electron beam irradiation with energies of 4, 110 and 200 keV and fluences up to ∼1.5 × 10 22 e m -2 has been studied to determine the displacement energies. The 110 and 200 keV irradiations were performed in situ using a transmission electron microscope; the 4 keV irradiations were performed ex situ using an electron gun. In all three irradiations, no structural modification of the zirconia was observed, despite the high fluxes and fluences. However the Si substrate on which the zirconia film was deposited was amorphized under the 200 keV electron irradiation. Examination of the electron-solid interactions reveals that the kinetic energy transfer from the 200 keV electrons to the silicon lattice is sufficient to cause atomic displacements, resulting in amorphization. The kinetic energy transfer from the 200 keV electrons to the oxygen sub-lattice of the zirconia may be sufficient to induce defect production, however, no evidence of defect production was observed. The displacement cross-section value of Zr was found to be ∼400 times greater than that of O indicating that the O atoms are effectively screened from the electrons by the Zr atoms, and, therefore, the displacement of O is inefficient.

UR - http://www.scopus.com/inward/record.url?scp=84862777706&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862777706&partnerID=8YFLogxK

U2 - 10.1016/j.jnucmat.2011.12.021

DO - 10.1016/j.jnucmat.2011.12.021

M3 - Article

AN - SCOPUS:84862777706

VL - 422

SP - 86

EP - 91

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

SN - 0022-3115

IS - 1-3

ER -