Deposition of AlN thin films with cubic crystal structures on silicon substrates at room temperature

Zhong Min Ren, Yong Feng Lu, Yeow Whatt Goh, Tow Chong Chong, Mei Ling Ng, Jian Ping Wang, Boon Aik Cheong, Yun Fook Liew

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Abstract

Cubic AlN thin films were deposited at room temperature by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target. The full-width at half maximum (FWHM) of the X-ray diffraction peak in the θ to approximately 2θ scan can reach a value of 0.27 degrees. In the Raman spectroscopy measurement, a new peak at 2333 cm-1 originating from cubic AlN polycrystalline was observed. Nitrogen ions not only effectively promote the formation of stable Al-N bonds but also improve the crystal properties of the deposited thin films. A nitrogen ion energy of 400 eV is proposed for the thin-film deposition.

Original languageEnglish (US)
Pages (from-to)L423-L425
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number5 A
Publication statusPublished - Dec 3 2000

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Ren, Z. M., Lu, Y. F., Goh, Y. W., Chong, T. C., Ng, M. L., Wang, J. P., ... Liew, Y. F. (2000). Deposition of AlN thin films with cubic crystal structures on silicon substrates at room temperature. Japanese Journal of Applied Physics, Part 2: Letters, 39(5 A), L423-L425.