Dependence of noise in magnetic tunnel junction sensors on annealing field and temperature

Sy-Hwang Liou, Rui Zhang, Stephen E. Russek, L. Yuan, Sean T. Halloran, David P. Pappas

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The minimum detectable field of magnetoresistive sensors is limited by their intrinsic noise. Magnetization fluctuations are one of the crucial noise sources and are related to the magnetization alignment at the antiferromagnetic-ferromagnetic interface. In this study, we investigated the low frequency noise of magnetic tunnel junctions (MTJs) annealed in the temperature range from 265 to 305 °C and magnetic fields up to 7 T, either in helium or hydrogen environments. Our results indicate that the magnetic fluctuators in these MTJs changed their frequency based on annealing field and temperature. The noise of the MTJs at low frequency can be reduced by annealing in high magnetic field (7 T) and further improved by annealing in a hydrogen environment.

Original languageEnglish (US)
Article number07E920
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
StatePublished - Apr 21 2008

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tunnel junctions
annealing
sensors
low frequencies
magnetization
temperature
hydrogen
magnetic fields
helium
alignment

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Dependence of noise in magnetic tunnel junction sensors on annealing field and temperature. / Liou, Sy-Hwang; Zhang, Rui; Russek, Stephen E.; Yuan, L.; Halloran, Sean T.; Pappas, David P.

In: Journal of Applied Physics, Vol. 103, No. 7, 07E920, 21.04.2008.

Research output: Contribution to journalArticle

Liou, Sy-Hwang ; Zhang, Rui ; Russek, Stephen E. ; Yuan, L. ; Halloran, Sean T. ; Pappas, David P. / Dependence of noise in magnetic tunnel junction sensors on annealing field and temperature. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 7.
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