Deformation potentials of the E 1 (TO) and E 2 modes of InN

V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, Mathias Schubert, H. Lu, W. J. Schaff

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The determination of deformation potentials of E 1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E 1(TO) mode was 477.9 cm -1 and 491.9 cm -1 for the E 2 modes.

Original languageEnglish (US)
Pages (from-to)3636-3638
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - May 3 2004

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ellipsometry
stiffness
sapphire
x ray diffraction
molecular beam epitaxy
buffers
Raman spectra

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Darakchieva, V., Paskov, P. P., Valcheva, E., Paskova, T., Monemar, B., Schubert, M., ... Schaff, W. J. (2004). Deformation potentials of the E 1 (TO) and E 2 modes of InN. Applied Physics Letters, 84(18), 3636-3638. https://doi.org/10.1063/1.1738520

Deformation potentials of the E 1 (TO) and E 2 modes of InN. / Darakchieva, V.; Paskov, P. P.; Valcheva, E.; Paskova, T.; Monemar, B.; Schubert, Mathias; Lu, H.; Schaff, W. J.

In: Applied Physics Letters, Vol. 84, No. 18, 03.05.2004, p. 3636-3638.

Research output: Contribution to journalArticle

Darakchieva, V, Paskov, PP, Valcheva, E, Paskova, T, Monemar, B, Schubert, M, Lu, H & Schaff, WJ 2004, 'Deformation potentials of the E 1 (TO) and E 2 modes of InN', Applied Physics Letters, vol. 84, no. 18, pp. 3636-3638. https://doi.org/10.1063/1.1738520
Darakchieva V, Paskov PP, Valcheva E, Paskova T, Monemar B, Schubert M et al. Deformation potentials of the E 1 (TO) and E 2 modes of InN. Applied Physics Letters. 2004 May 3;84(18):3636-3638. https://doi.org/10.1063/1.1738520
Darakchieva, V. ; Paskov, P. P. ; Valcheva, E. ; Paskova, T. ; Monemar, B. ; Schubert, Mathias ; Lu, H. ; Schaff, W. J. / Deformation potentials of the E 1 (TO) and E 2 modes of InN. In: Applied Physics Letters. 2004 ; Vol. 84, No. 18. pp. 3636-3638.
@article{b6fa14b0d24a4020a434067761b9d110,
title = "Deformation potentials of the E 1 (TO) and E 2 modes of InN",
abstract = "The determination of deformation potentials of E 1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Gr{\"u}neisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E 1(TO) mode was 477.9 cm -1 and 491.9 cm -1 for the E 2 modes.",
author = "V. Darakchieva and Paskov, {P. P.} and E. Valcheva and T. Paskova and B. Monemar and Mathias Schubert and H. Lu and Schaff, {W. J.}",
year = "2004",
month = "5",
day = "3",
doi = "10.1063/1.1738520",
language = "English (US)",
volume = "84",
pages = "3636--3638",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

TY - JOUR

T1 - Deformation potentials of the E 1 (TO) and E 2 modes of InN

AU - Darakchieva, V.

AU - Paskov, P. P.

AU - Valcheva, E.

AU - Paskova, T.

AU - Monemar, B.

AU - Schubert, Mathias

AU - Lu, H.

AU - Schaff, W. J.

PY - 2004/5/3

Y1 - 2004/5/3

N2 - The determination of deformation potentials of E 1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E 1(TO) mode was 477.9 cm -1 and 491.9 cm -1 for the E 2 modes.

AB - The determination of deformation potentials of E 1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E 1(TO) mode was 477.9 cm -1 and 491.9 cm -1 for the E 2 modes.

UR - http://www.scopus.com/inward/record.url?scp=2542423819&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2542423819&partnerID=8YFLogxK

U2 - 10.1063/1.1738520

DO - 10.1063/1.1738520

M3 - Article

VL - 84

SP - 3636

EP - 3638

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -