Defect characterization in 3C-SiC films grown on thin and thick silicon top layers of SIMOX

M. H. Hong, J. Chung, Fereydoon Namavar, P. Pirouz

Research output: Contribution to journalConference article

Abstract

Cubic 3C-SiC has been heteroepitaxially grown on the top Si layer of SIMOX (separation by implantation of oxygen) by chemical vapor deposition. One of the films is grown on a SIMOX that has a thick (approximately 200 nm) topmost Si layer while the other is deposited on a SIMOX with a thin (approximately 35 nm) topmost Si layer. The microstructure of two such films has been compared by cross-sectional and plan-view transmission electron microscopy. The defects in both films are predominantly planar in nature. The defect density of 3C-SiC epilayer deposited on the thin Si substrate is much lower than that on the thick Si substrate. The difference in the defect content of the two systems is tentatively attributed to the difference in compliance of the two substrates.

Original languageEnglish (US)
JournalMaterials Science Forum
Volume338
StatePublished - Jan 1 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Fingerprint

Silicon
implantation
Oxygen
Defects
defects
silicon
oxygen
Substrates
Epilayers
Defect density
Chemical vapor deposition
vapor deposition
Transmission electron microscopy
transmission electron microscopy
microstructure
Microstructure

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Defect characterization in 3C-SiC films grown on thin and thick silicon top layers of SIMOX. / Hong, M. H.; Chung, J.; Namavar, Fereydoon; Pirouz, P.

In: Materials Science Forum, Vol. 338, 01.01.2000.

Research output: Contribution to journalConference article

Hong, M. H. ; Chung, J. ; Namavar, Fereydoon ; Pirouz, P. / Defect characterization in 3C-SiC films grown on thin and thick silicon top layers of SIMOX. In: Materials Science Forum. 2000 ; Vol. 338.
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