CW Ar** plus -LASER ANNEALING CHARACTERISTICS OF HIGH-DOSE As** plus - AND Sb** plus -IMPLANTED SILICON.

Peihsin Tsien Peihsin, Huiwang Lin Huiwang, Dongmei Li, Yongfeng Lu

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Abstract

The annealing behavior of the high-dose arsenic implanted silicon (double energy implantation: 150 kev, 1. 05 multiplied by 10**1**6 cm** minus **2 and 60 kev 3. 5 multiplied by 10**1**5 cm minus //2) using cw Ar** plus -Laser irradiation is investigated. The annealing characteristics depend upon the substrate preheating temperature and laser power. The experimental results show that a higher electrical activation can be obtained under suitable substrate preheating temperature and laser power. Above preheating the electrical activation is reduced due to the relaxation of metastable concentration; below preheating serious damages on the wafer, even fine cracks, can be produced due to higher laser power. In high-dose antimony implanted silicon (150 kev, 10**1**6 cm** minus **2) the same phenomena are also found.

Original languageEnglish (US)
Pages (from-to)641-647
Number of pages7
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume6
Issue number6
Publication statusPublished - Nov 1 1985

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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