CW Ar** plus -LASER ANNEALING CHARACTERISTICS OF HIGH-DOSE As** plus - AND Sb** plus -IMPLANTED SILICON.

Peihsin Tsien Peihsin, Huiwang Lin Huiwang, Dongmei Li, Yongfeng Lu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The annealing behavior of the high-dose arsenic implanted silicon (double energy implantation: 150 kev, 1. 05 multiplied by 10**1**6 cm** minus **2 and 60 kev 3. 5 multiplied by 10**1**5 cm minus //2) using cw Ar** plus -Laser irradiation is investigated. The annealing characteristics depend upon the substrate preheating temperature and laser power. The experimental results show that a higher electrical activation can be obtained under suitable substrate preheating temperature and laser power. Above preheating the electrical activation is reduced due to the relaxation of metastable concentration; below preheating serious damages on the wafer, even fine cracks, can be produced due to higher laser power. In high-dose antimony implanted silicon (150 kev, 10**1**6 cm** minus **2) the same phenomena are also found.

Original languageEnglish (US)
Pages (from-to)641-647
Number of pages7
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume6
Issue number6
StatePublished - Nov 1 1985

Fingerprint

laser annealing
Preheating
Annealing
dosage
heating
Lasers
Silicon
Chemical activation
activation
lasers
Antimony
annealing
High power lasers
Arsenic
silicon
Substrates
Laser beam effects
antimony
arsenic
high power lasers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

CW Ar** plus -LASER ANNEALING CHARACTERISTICS OF HIGH-DOSE As** plus - AND Sb** plus -IMPLANTED SILICON. / Tsien Peihsin, Peihsin; Lin Huiwang, Huiwang; Li, Dongmei; Lu, Yongfeng.

In: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, Vol. 6, No. 6, 01.11.1985, p. 641-647.

Research output: Contribution to journalArticle

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abstract = "The annealing behavior of the high-dose arsenic implanted silicon (double energy implantation: 150 kev, 1. 05 multiplied by 10**1**6 cm** minus **2 and 60 kev 3. 5 multiplied by 10**1**5 cm minus //2) using cw Ar** plus -Laser irradiation is investigated. The annealing characteristics depend upon the substrate preheating temperature and laser power. The experimental results show that a higher electrical activation can be obtained under suitable substrate preheating temperature and laser power. Above preheating the electrical activation is reduced due to the relaxation of metastable concentration; below preheating serious damages on the wafer, even fine cracks, can be produced due to higher laser power. In high-dose antimony implanted silicon (150 kev, 10**1**6 cm** minus **2) the same phenomena are also found.",
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AU - Li, Dongmei

AU - Lu, Yongfeng

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AB - The annealing behavior of the high-dose arsenic implanted silicon (double energy implantation: 150 kev, 1. 05 multiplied by 10**1**6 cm** minus **2 and 60 kev 3. 5 multiplied by 10**1**5 cm minus //2) using cw Ar** plus -Laser irradiation is investigated. The annealing characteristics depend upon the substrate preheating temperature and laser power. The experimental results show that a higher electrical activation can be obtained under suitable substrate preheating temperature and laser power. Above preheating the electrical activation is reduced due to the relaxation of metastable concentration; below preheating serious damages on the wafer, even fine cracks, can be produced due to higher laser power. In high-dose antimony implanted silicon (150 kev, 10**1**6 cm** minus **2) the same phenomena are also found.

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