Current injection mechanism for porous-silicon transparent surface light-emitting diodes

H. Paul Maruska, F. Namavar, N. M. Kalkhoran

Research output: Contribution to journalArticle

101 Citations (Scopus)

Abstract

We present a model for the injection of minority carriers into porous silicon films which results in visible dc electroluminescence. A thin interfacial dielectric region is postulated between the surface of the porous silicon layer and a transparent conductive oxide on the surface, which allows alignment of states between the two corresponding conduction bands of these materials under bias, and hence, overlap of electron wave functions and the passage of a tunneling current. Interface state densities are calculated and a parasitic nonradiative shunt current through such states is discussed.

Original languageEnglish (US)
Pages (from-to)1338-1340
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number11
DOIs
StatePublished - Dec 1 1992

Fingerprint

porous silicon
light emitting diodes
injection
shunts
silicon films
minority carriers
electroluminescence
conduction bands
alignment
wave functions
oxides
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Current injection mechanism for porous-silicon transparent surface light-emitting diodes. / Maruska, H. Paul; Namavar, F.; Kalkhoran, N. M.

In: Applied Physics Letters, Vol. 61, No. 11, 01.12.1992, p. 1338-1340.

Research output: Contribution to journalArticle

Maruska, H. Paul ; Namavar, F. ; Kalkhoran, N. M. / Current injection mechanism for porous-silicon transparent surface light-emitting diodes. In: Applied Physics Letters. 1992 ; Vol. 61, No. 11. pp. 1338-1340.
@article{9e212b127e3f41a993bff2b4fa70fa60,
title = "Current injection mechanism for porous-silicon transparent surface light-emitting diodes",
abstract = "We present a model for the injection of minority carriers into porous silicon films which results in visible dc electroluminescence. A thin interfacial dielectric region is postulated between the surface of the porous silicon layer and a transparent conductive oxide on the surface, which allows alignment of states between the two corresponding conduction bands of these materials under bias, and hence, overlap of electron wave functions and the passage of a tunneling current. Interface state densities are calculated and a parasitic nonradiative shunt current through such states is discussed.",
author = "Maruska, {H. Paul} and F. Namavar and Kalkhoran, {N. M.}",
year = "1992",
month = "12",
day = "1",
doi = "10.1063/1.108467",
language = "English (US)",
volume = "61",
pages = "1338--1340",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Current injection mechanism for porous-silicon transparent surface light-emitting diodes

AU - Maruska, H. Paul

AU - Namavar, F.

AU - Kalkhoran, N. M.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - We present a model for the injection of minority carriers into porous silicon films which results in visible dc electroluminescence. A thin interfacial dielectric region is postulated between the surface of the porous silicon layer and a transparent conductive oxide on the surface, which allows alignment of states between the two corresponding conduction bands of these materials under bias, and hence, overlap of electron wave functions and the passage of a tunneling current. Interface state densities are calculated and a parasitic nonradiative shunt current through such states is discussed.

AB - We present a model for the injection of minority carriers into porous silicon films which results in visible dc electroluminescence. A thin interfacial dielectric region is postulated between the surface of the porous silicon layer and a transparent conductive oxide on the surface, which allows alignment of states between the two corresponding conduction bands of these materials under bias, and hence, overlap of electron wave functions and the passage of a tunneling current. Interface state densities are calculated and a parasitic nonradiative shunt current through such states is discussed.

UR - http://www.scopus.com/inward/record.url?scp=21544478504&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544478504&partnerID=8YFLogxK

U2 - 10.1063/1.108467

DO - 10.1063/1.108467

M3 - Article

AN - SCOPUS:21544478504

VL - 61

SP - 1338

EP - 1340

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -