Critical-point model dielectric function analysis of WO 3 thin films deposited by atomic layer deposition techniques

Ufuk Klllç, Derek Sekora, Alyssa Mock, Rafał Korlacki, Shah Valloppilly, Elena M. Echeverría, Natale Ianno, Eva Schubert, Mathias Schubert

Research output: Contribution to journalArticle

Abstract

WO 3 thin films were grown by atomic layer deposition and spectroscopic ellipsometry data gathered in the photon energy range of 0.72-8.5 eV, and from multiple samples were utilized to determine the frequency dependent complex-valued isotropic dielectric function for WO 3 . We employ a critical-point model dielectric function analysis and determine a parameterized set of oscillators and compare the observed critical-point contributions with the vertical transition energy distribution found within the band structure of WO 3 calculated by the density functional theory. The surface roughness was investigated using atomic force microscopy, and compared with the effective roughness as seen by the spectroscopic ellipsometry.

Original languageEnglish (US)
Article number115302
JournalJournal of Applied Physics
Volume124
Issue number11
DOIs
StatePublished - Sep 21 2018

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atomic layer epitaxy
ellipsometry
critical point
thin films
energy distribution
surface roughness
roughness
oscillators
atomic force microscopy
density functional theory
photons
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Critical-point model dielectric function analysis of WO 3 thin films deposited by atomic layer deposition techniques . / Klllç, Ufuk; Sekora, Derek; Mock, Alyssa; Korlacki, Rafał; Valloppilly, Shah; Echeverría, Elena M.; Ianno, Natale; Schubert, Eva; Schubert, Mathias.

In: Journal of Applied Physics, Vol. 124, No. 11, 115302, 21.09.2018.

Research output: Contribution to journalArticle

Klllç, U, Sekora, D, Mock, A, Korlacki, R, Valloppilly, S, Echeverría, EM, Ianno, N, Schubert, E & Schubert, M 2018, ' Critical-point model dielectric function analysis of WO 3 thin films deposited by atomic layer deposition techniques ', Journal of Applied Physics, vol. 124, no. 11, 115302. https://doi.org/10.1063/1.5038746
Klllç, Ufuk ; Sekora, Derek ; Mock, Alyssa ; Korlacki, Rafał ; Valloppilly, Shah ; Echeverría, Elena M. ; Ianno, Natale ; Schubert, Eva ; Schubert, Mathias. / Critical-point model dielectric function analysis of WO 3 thin films deposited by atomic layer deposition techniques In: Journal of Applied Physics. 2018 ; Vol. 124, No. 11.
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