We have prepared Lb^Ge jhb^Ge^Lrax and NbjGe^Sn. on heated alumina substrates using CVD. Midresistive transitions were up to 2IK and transition widths were as low as 0,3K. Critical currents were measured to 22 Tesla at temperatures from 4.2K to 19K. Effective upper critical fields Bjxwere measured by extrapolating Jc vs J B data. Preliminary data show that for small Ga additions, 3 increased above the value at x=0. Flux pinning forces vs reduced field b=B/Bjxdo not obey scaling lav/s, which we explain as being due to inhomogeneous material having a distribution of Tc and BC3W values.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering