Critical Currents in NblGe Based Pseudobinaries

Samuel A. Alterovitz, John A. Woollam, John J. Engelhardt, George W. Webb

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have prepared Lb^Ge jhb^Ge^Lrax and NbjGe^Sn. on heated alumina substrates using CVD. Midresistive transitions were up to 2IK and transition widths were as low as 0,3K. Critical currents were measured to 22 Tesla at temperatures from 4.2K to 19K. Effective upper critical fields Bjxwere measured by extrapolating Jc vs J B data. Preliminary data show that for small Ga additions, 3 increased above the value at x=0. Flux pinning forces vs reduced field b=B/Bjxdo not obey scaling lav/s, which we explain as being due to inhomogeneous material having a distribution of Tc and BC3W values.

Original languageEnglish (US)
Pages (from-to)512-515
Number of pages4
JournalIEEE Transactions on Magnetics
Volume15
Issue number1
DOIs
StatePublished - Jan 1 1979

Fingerprint

Flux pinning
Aluminum Oxide
Critical currents
Chemical vapor deposition
Alumina
Substrates
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Critical Currents in NblGe Based Pseudobinaries. / Alterovitz, Samuel A.; Woollam, John A.; Engelhardt, John J.; Webb, George W.

In: IEEE Transactions on Magnetics, Vol. 15, No. 1, 01.01.1979, p. 512-515.

Research output: Contribution to journalArticle

Alterovitz, Samuel A. ; Woollam, John A. ; Engelhardt, John J. ; Webb, George W. / Critical Currents in NblGe Based Pseudobinaries. In: IEEE Transactions on Magnetics. 1979 ; Vol. 15, No. 1. pp. 512-515.
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